Ge and SiGe for High Performance MOSFETs and Integrated Optical Interconnects
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概要
- 論文の詳細を見る
- 2004-09-15
著者
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Kim Hyoungsub
Department Of Advanced Materials Engineering Sungkyunkwan University
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Kim Hyoungsub
Department Of Materials Science And Engineering Stanford University
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SARASWAT Krishna
Department of Electrical Engineering, Stanford University
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CHUI Chi
Department of Electrical Engineering, Stanford University
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KRISHNAMOHAN Tejas
Department of Electrical Engineering, Stanford University
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OKYAY Ali
Department of Electrical Engineering, Stanford University
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MCINTYRE Paul
Department of Materials Science and Engineering, Stanford University
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Mcintyre Paul
Department Of Materials Science And Engineering Stanford University
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Chui Chi
Department Of Electrical Engineering Stanford University
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Okyay Ali
Department Of Electrical Engineering Stanford University
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Krishnamohan Tejas
Department Of Electrical Engineering Stanford University
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Saraswat Krishna
Department Of Electrical Engineering Stanford University
関連論文
- Effect of Annealing Temperature on Dielectric Constant and Bonding Structure of Low-k SiCOH Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition
- Ge and SiGe for High Performance MOSFETs and Integrated Optical Interconnects
- Analysis of Structure and Orientation of Vertical Germanium Single Crystal Nanowires on Silicon Substrates
- Low Thermal Budget Polycrystalline Silicon-Germanium Thin-Film Transistors Fabricated by Rapid Thermal Annealing
- Evaluating Strained/Relaxed-Ge, Strained-Si, Strained-SiGe For Future Nanoscale p-MOSFETs
- Characteristics of Polymer Light Emitting Diodes with the LiF Anode Interfacial Layer
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