SARASWAT Krishna | Department of Electrical Engineering, Stanford University

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概要

• SARASWAT Krishna C.の詳細を見る
• 同名の論文著者
• Department of Electrical Engineering, Stanford Universityの論文著者

関連著者

• SARASWAT Krishna

  Department of Electrical Engineering, Stanford University

• Saraswat Krishna

  Department Of Electrical Engineering Stanford University

• Krishnamohan Tejas

  Department Of Electrical Engineering Stanford University

• King Tsu-jae

  Xerox Palo Alto Research Center

• Kim Hyoungsub

  Department Of Advanced Materials Engineering Sungkyunkwan University

• Kim Hyoungsub

  Department Of Materials Science And Engineering Stanford University

• Nishi Yoshio

  Department Of Applied Physics Faculty Of Engineering Osaka City University

• CHUI Chi

  Department of Electrical Engineering, Stanford University

• KRISHNAMOHAN Tejas

  Department of Electrical Engineering, Stanford University

• OKYAY Ali

  Department of Electrical Engineering, Stanford University

• MCINTYRE Paul

  Department of Materials Science and Engineering, Stanford University

• JURICHICH Steve

  Department of Electrical Engineering, Stanford University

• MEHLHAFF John

  Aktis Corporation

• Jungemann Christoph

  University Of The Armed Forces

• Kim Donghyun

  Department Of Electrical Engineering Stanford University

• Kim Donghyun

  Department Of Electrical Engineering And Computer Science Korea Advanced Institute Of Science And Te

• Mcintyre Paul

  Department Of Materials Science And Engineering Stanford University

• Chui Chi

  Department Of Electrical Engineering Stanford University

• Okyay Ali

  Department Of Electrical Engineering Stanford University

• Jurichich Steve

  Department Of Electrical Engineering Stanford University

• KIM Donghyun

  Department of Chemistry, Hanyang University

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著作論文

• Ge and SiGe for High Performance MOSFETs and Integrated Optical Interconnects
• Low Thermal Budget Polycrystalline Silicon-Germanium Thin-Film Transistors Fabricated by Rapid Thermal Annealing
• Evaluating Strained/Relaxed-Ge, Strained-Si, Strained-SiGe For Future Nanoscale p-MOSFETs

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