Characteristics of Polymer Light Emitting Diodes with the LiF Anode Interfacial Layer

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概要

• 論文の詳細を見る

• Electrical and electroluminescent characteristics of poly(2-methoxy-5-(2$'$-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV)-based polymer light emitting diodes (PLEDs) with the LiF anode interfacial layer were investigated. Current–voltage measurement and impedance analysis showed that LiF insertion affected the electrical properties of PLEDs notably. The maximum luminance efficiency of the PLED device with a LiF anode interfacial layer of 1-nm-thick was 3.0 lm/W, which is higher than 1.97 lm/W of the PLED device without a LiF layer. By inserting LiF as the anode interfacial layer, excess injection of holes from indium tin oxide anode can be reduced and hence the balance between electrons and holes can be increased in the emitting layer to improve device efficiency.

• 2006-04-30

著者

• KIM H.

  School of Mechanical and Aerospace Engineering, Gyeongsang National University

• Jung Donggeun

  Department Of Physics And Institute Of Basic Science Sungkyunkwan University

• Kim Hyoungsub

  Department Of Advanced Materials Engineering Sungkyunkwan University

• Yi Junsin

  School Of Electrical And Computer Engineering Sungkyunkwan University

• Chae Heeyeop

  Department Of Chemical Engineering Sungkyunkwan University

• Park Keunhee

  Department of Physics, Institute of Basic Science, and Brain Korea 21 Physics Research Division, Sungkyunkwan University, Suwon 440-746, Korea

• Boo Jin-Hyo

  Department of Chemistry and Institute of Basic Science, Sungkyunkwan University, Suwon 440-746, Korea

• Boo Jin-hyo

  Department of Chemistry, Institute of Basic Science, and Brain Korea 21 Physics Research Division, Sungkyunkwan University, Suwon 440-746, Korea

• Manna U.

  School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Korea

• Yi Junsin

  School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Korea

• Sohn Sunyoung

  Department of Electronics Engineering, Catholic University of Daegu, Gyeongsan, Gyeongbuk 712-702, Republic of Korea

• Jung Donggeun

  Department of Physics, Institute of Basic Science, and Brain Korea 21 Physics Research Division, Sungkyunkwan University, Suwon 440-746, Korea

• Lee Daewoo

  Department of Physics, Institute of Basic Science, and Brain Korea 21 Physics Research Division, Sungkyunkwan University, Suwon 440-746, Korea

• Chae Heeyeop

  Department of Chemical Engineering, Sungkyunkwan University, Suwon 440-746, Korea

• Kim H.

  School of Applied Biosciences, Kyungpook National University

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