Structural and electrical properties of HfO_2/Hf-silicate/Si structures by rf magnetron sputtering

概要

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Properties of the HfO_2/Hf-silicate/Si structure with the Hf-silicate layer which was formed by Hf metal deposition on Si and subsequent reaction of Hf with Si and oxygen during the HfO_2 deposition were studied. Post-deposition N_2 annealing reduced the equivalent oxide thickness (EOT) value and improved leakage characteristics of the HfO_2/Hf-silicate/Si structure. The EOT value was reduced from 2.70 nm to 2.23 nm after annealing. At a proper voltage of 2.5 V, which was defined as the difference between the applied gate bias and the flat band voltage, the leakage current density of annealed HfO_2/Hf-silicate/Si structure was 1.88 x 10^<-7> A/cm^2 while that of as-formed HfO_2/Hf-silicate/Si structure was 1.92 x 10^<-6> A/cm^2. The breakdown field increased from 7.29 MV/cm to 9.71 MV/cm after annealing.
社団法人電子情報通信学会の論文
2001-06-28