Formation of Reliable HfO_2/HfSi_xO_y Gate-Dielectric for Metal-Oxide-Semiconductor Devices
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-11-30
著者
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Jung D
Sungkyunkwan Univ. Suwon Kor
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Jung Donggeun
Department Of Physics Brain Korea 21 Physics Research Division Institute Of Basic Science And Center
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Jung Donggeun
Department Of Physics And Institute Of Basic Science Sungkyunkwan University
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YANG Cheol-Woong
School of Adv. Material Sci. & Eng., Sungkyunkwan University
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Roh Y
School Of Information And Communication Engineering Son Gkyunkwan University
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QUAN Yong
School of Information and Communication Engineering, Son gkyunkwan University
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LEE Jang
School of Information and Communication Engineering, Son gkyunkwan University
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KANG Hyeoksu
School of Information and Communication Engineering, Son gkyunkwan University
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ROH Yonghan
School of Information and Communication Engineering, Son gkyunkwan University
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Jung Donggeun
Department Of Physics Brain Korea 21 Physics Research Division And Institute Of Basic Science Sun Gl
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Quan Yong
School Of Information And Communication Engineering Son Gkyunkwan University
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Lee Jang
School Of Information And Communication Engineering Son Gkyunkwan University
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Roh Yonghan
School Of Electrical And Computer Engineering Sungkyunkwan University
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Kang Hyeoksu
School Of Information And Communication Engineering Son Gkyunkwan University
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Yang Cheol-woong
School Of Metallurgical And Materials Engineering Sungkyunkwon University
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Lee Jang
School Of Electrical Engineering Seoul National University
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Lee Jang
School Of Electrical Engineering & Automatic Control Research Center Seoul National University
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