YANG Cheol-Woong | School of Adv. Material Sci. & Eng., Sungkyunkwan University
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概要
関連著者
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YANG Cheol-Woong
School of Adv. Material Sci. & Eng., Sungkyunkwan University
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Jung Donggeun
Department Of Physics And Institute Of Basic Science Sungkyunkwan University
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Jung D
Sungkyunkwan Univ. Suwon Kor
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Jung Donggeun
Department Of Physics Brain Korea 21 Physics Research Division Institute Of Basic Science And Center
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Roh Y
School Of Information And Communication Engineering Son Gkyunkwan University
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KANG Hyeoksu
School of Information and Communication Engineering, Son gkyunkwan University
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ROH Yonghan
School of Information and Communication Engineering, Son gkyunkwan University
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Jung Donggeun
Department Of Physics Brain Korea 21 Physics Research Division And Institute Of Basic Science Sun Gl
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Roh Yonghan
School Of Electrical And Computer Engineering Sungkyunkwan University
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Kang Hyeoksu
School Of Information And Communication Engineering Son Gkyunkwan University
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Yang Cheol-woong
School Of Metallurgical And Materials Engineering Sungkyunkwon University
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BAE Geunhag
Department of Physics, Brain Korea 21 Physics Research Division and Institute of Basic Science, Sung
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LEE Hunjung
Department of Physics, Brain Korea 21 Physics Research Division and Institute of Basic Science, Sung
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Bae Geunhag
Department Of Physics Brain Dorea 21 Physics Research Division And Institute Of Basic Science
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Lee Hunjung
Department Of Physics Brain Dorea 21 Physics Research Division And Institute Of Basic Science
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Jung Donggeun
Department Of Physics Brain Korea 21 Physics Research Division And Institute Of Basic Science Sungky
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Choi Hyo-jick
Department Of Ceramic Engineering Yonsei University
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KANG Ho-Kyu
Process Development Team, Semiconductor R&D Division, Samsung Electronics Co.
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Choi Siyoung
Process Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd.
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Ko Dae-hong
Department Of Ceramic Engineering Yonsei University
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KANG Han-Byul
School of Adv. Material Sci. & Eng., Sungkyunkwan University
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PARK Jongwoo
Technology Reliability, System LSI, Samsung Electronics
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BAE Jee-Hwan
School of Adv. Material Sci. & Eng., Sungkyunkwan University
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KU Ja-Hum
Process Development Team Semiconductor R&D Division, Samsung Electronics Ltd.
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FUJIHARA Kazuyuki
Process Development Team Semiconductor R&D Division, Samsung Electronics Ltd.
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QUAN Yong
School of Information and Communication Engineering, Son gkyunkwan University
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LEE Jang
School of Information and Communication Engineering, Son gkyunkwan University
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JUNG Dinggeun
Department of Physics, Brain Korea 21 Physics Research Division and Institute of Basic Science, Sung
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SHIM Cheonman
Department of Physics, Brain Korea 21 Physics Research Division, Institute of Basic Science, and Cen
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Kang H‐k
Samsung Electronics Co. Ltd. Kyungki‐do Kor
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Kang Ho-kyu
Process Development Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kang Ho-kyu
Samsung Electronics Co. Semiconductor R&d Center Memory Process Development Team 2
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Kang Ho-kyu
Ls Process Development Group Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kang Ho-kyu
Process Development Team Semiconductor R&d Division Samsung Electronics Ltd.
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CHOI Chul-Joon
Process Development Team Semiconductor R&D Division Samsung Electronics Co.
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Shim Cheonman
Department Of Physics Brain Korea 21 Physics Research Division And Institute Of Basic Science Sungky
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Choi Chul-joon
Process Development Team Semiconductor R&d Division Samsung Electronics Co.
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CHOI Jayoung
Department of Physics, Brain Korea 21 Physics Research Division and Institute of Basic Science, Sung
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LEE Nae-Eung
School of Metallurgical and Materials Engineering, Sungkyunkwan University
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Quan Yong
School Of Information And Communication Engineering Son Gkyunkwan University
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Lee Jang
School Of Information And Communication Engineering Son Gkyunkwan University
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Ku Ja-hum
Process Development Team Semiconductor R&d Division Samsung Electronics Ltd.
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Lee Nae-eung
School Of Metallurgical And Materials Engineering Sungkyunkwan University
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Choi Jayoung
Department Of Physics Brain Korea 21 Physics Research Division And Institute Of Basic Science Sungky
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Choi S
Samsung Electronics Co. Ltd. Kyunggi‐do Kor
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Choi Siyoung
Process Development Team Semiconductor R&d Division Samsung Electronics Ltd.
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Choi Siyoung
Process Development Team Memory Division Samsung Electronics Co. Ltd.
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Bae Jee-hwan
School Of Adv. Material Sci. & Eng. Sungkyunkwan University
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Park Jongwoo
Technology Reliability System Lsi Samsung Electronics
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Kang Han-byul
School Of Adv. Material Sci. & Eng. Sungkyunkwan University
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Kang Ho-kyu
Process Development Team Semiconductor R&d Division Samsung Electronics Co.
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Fujihara Kazuyuki
Process Development Team Semiconductor R&d Division Samsung Electronics Ltd.
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Yang Cheol-woong
School Of Adv. Material Sci. & Eng. Sungkyunkwan University
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Yang Cheol-woong
School Of Metallurgical And Materials Engineering Sungkyunkwan University
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Lee Jang
School Of Electrical Engineering Seoul National University
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Lee Jang
School Of Electrical Engineering & Automatic Control Research Center Seoul National University
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Lee Nae-Eung
School of Advanced Materials Science and Engineering and Center for Advanced Plasma Surface Technology, Sungkyunkwan University, Suwon, Kyunggi-do 440-746, Korea
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FUJIHARA Kazuyuki
Process Development Team Semiconductor R&D Division, Samsung Electronics Ltd.
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Choi Siyoung
Process Development Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co.
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KU Ja-Hum
Process Development Team Semiconductor R&D Division Samsung Electronics Co.
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FUJIHARA Kazuyuki
Process Development Team Semiconductor R&D Division Samsung Electronics Co.
著作論文
- Crystallization Behaviour of Electroless Ni-P UBM with Medium Phosphorous Induced by Single and Step Heat Treatment
- Formation of Reliable HfO_2/HfSi_xO_y Gate-Dielectric for Metal-Oxide-Semiconductor Devices
- Properties of HfO_2/Hf-Silicate/Si Structures with Hf-Silicate Formed by Hf Metal Deposition and Subsequent Reaction : Electrical Properties of Condensed Matter
- Structural and electrical properties of HfO_2/Hf-silicate/Si structures by rf magnetron sputtering
- Structural and electrical properties of HfO_2/Hf-silicate/Si structures by rf magnetron sputtering
- A Study on the Germano-Silicide Formation in the Ni/Si_Ge_x System for CMOS Device Applications
- Characteristics of Copper Diffusion into Low Dielectric Constant Plasma Polymerized Cyclohexane Thin Films