Roh Yonghan | School Of Electrical And Computer Engineering Sungkyunkwan University
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- 同名の論文著者
- School Of Electrical And Computer Engineering Sungkyunkwan Universityの論文著者
関連著者
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Roh Yonghan
School Of Electrical And Computer Engineering Sungkyunkwan University
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ROH Yonghan
School of Information and Communication Engineering, Son gkyunkwan University
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Jung D
Sungkyunkwan Univ. Suwon Kor
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Jung Donggeun
Department Of Physics And Institute Of Basic Science Sungkyunkwan University
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YANG Cheol-Woong
School of Adv. Material Sci. & Eng., Sungkyunkwan University
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Roh Y
School Of Information And Communication Engineering Son Gkyunkwan University
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KANG Hyeoksu
School of Information and Communication Engineering, Son gkyunkwan University
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Jung Donggeun
Department Of Physics Brain Korea 21 Physics Research Division And Institute Of Basic Science Sun Gl
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Lee Hunjung
Department Of Physics Brain Dorea 21 Physics Research Division And Institute Of Basic Science
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Kang Hyeoksu
School Of Information And Communication Engineering Son Gkyunkwan University
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Yang Cheol-woong
School Of Metallurgical And Materials Engineering Sungkyunkwon University
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Jung Donggeun
Department Of Physics Brain Korea 21 Physics Research Division Institute Of Basic Science And Center
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BAE Geunhag
Department of Physics, Brain Korea 21 Physics Research Division and Institute of Basic Science, Sung
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LEE Hunjung
Department of Physics, Brain Korea 21 Physics Research Division and Institute of Basic Science, Sung
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Bae Geunhag
Department Of Physics Brain Dorea 21 Physics Research Division And Institute Of Basic Science
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CHUNG Ilsub
Microelectronics Laboratory, Materials and Device Sector, Samsung Advanced Institute of Technology
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Yi Insook
Osaka Uoiversity
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Yi Insook
Microelectronics And Device Laboratory Samsung Advanced Institute Of Technology
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Chung I
Microelectronics Laboratory Samsung Advanced Institute Of Technology
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Chung Ilsub
Material & Device Lab Samsung Advanced Institute Of Technology
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Chung Ilsub
Materials And Devices Lab Samsung Advanced Institute Of Technology
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Chung Ilsub
Microelectronics And Device Laboratory Samsung Advanced Institute Of Technology
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KIM DAEIK
School of Electrical and Computer Engineering, Sungkyunkwan University
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Kim Daeik
School Of Electrical And Computer Engineering Sungkyunkwan University
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Roh Yonghan
Microelectronics and Device Laboratory, Samsung Advanced Institute of Technology
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QUAN Yong
School of Information and Communication Engineering, Son gkyunkwan University
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LEE Jang
School of Information and Communication Engineering, Son gkyunkwan University
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JUNG Dinggeun
Department of Physics, Brain Korea 21 Physics Research Division and Institute of Basic Science, Sung
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Quan Yong
School Of Information And Communication Engineering Son Gkyunkwan University
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Kim Sung
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Lee Jang
School Of Information And Communication Engineering Son Gkyunkwan University
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Kim Leejun
Department Of Physics Brain Korea 21 Physics Research Division And Institute Of Basic Science Sungky
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ROH YOUGHAN
School of Electrical and Computer Engineering, Sungkyunkwan University
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Kim Jinmo
Department Of Physics Brain Korea 21 Physics Research Division And Institute Of Basic Science Sungky
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Kim Jinmo
Department Of Oriental Pharmacy College Of Pharmacy Woosuk University
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Choi S
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Lee Hunjung
Department Of Physics Brain Korea 21 Physics Research Division And Institute Of Basic Science Sungky
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JEON Hyungoo
School of Electrical and Computer Engineering, Sungkyunkwan University
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CHOI Sungwoo
School of Electrical and Computer Engineering, Sungkyunkwan University
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AHN Byungchul
School of Electrical and Computer Engineering, Sungkyunkwan University
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Choi Sungwoo
School Of Chemical Engineering And Institute Of Chemical Processes Seoul National University
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Jeon Hyungoo
School Of Electrical And Computer Engineering Sungkyunkwan University
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Ahn Byungchul
School Of Electrical And Computer Engineering Sungkyunkwan University
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Jung Donggeum
Department Of Physics Brain Korea 21 Physics Research Division And Institute Of Basic Science Sungky
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Lee Jang
School Of Electrical Engineering Seoul National University
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Oh Chang
Semiconductor Physics Research Center Department Of Semiconductor Science And Technology Chonbuk Nat
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Lee Jang
School Of Electrical Engineering & Automatic Control Research Center Seoul National University
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Kim Dong-Won
Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Gyeonggi 445-701, Korea
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Oh Chang
Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Gyeonggi 445-701, Korea
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Bae Hyun
Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Gyeonggi 445-701, Korea
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Yamada Satoru
Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Gyeonggi 445-701, Korea
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Jin Gyoyoung
Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Gyeonggi 445-701, Korea
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Jin Gyoyoung
Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Gyeonggi 445-701, Korea
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Yamada Satoru
Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Gyeonggi 445-701, Korea
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Bae Hyun
Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Gyeonggi 445-701, Korea
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Roh Yonghan
School of Information and Communication Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Korea
著作論文
- Formation of Reliable HfO_2/HfSi_xO_y Gate-Dielectric for Metal-Oxide-Semiconductor Devices
- Properties of HfO_2/Hf-Silicate/Si Structures with Hf-Silicate Formed by Hf Metal Deposition and Subsequent Reaction : Electrical Properties of Condensed Matter
- Structural and electrical properties of HfO_2/Hf-silicate/Si structures by rf magnetron sputtering
- Structural and electrical properties of HfO_2/Hf-silicate/Si structures by rf magnetron sputtering
- FERROELECTRIC PROPERTIES OF SOL-GEL DERIVED Pb(Zr, Ti)O_3 CAPACITORS GROWN ON IrO_2 ELECTRODE
- FERROELECTRIC PROPERTIES OF SOL-GEL DERIVED Pb(Zr, Ti)O_3 CAPACITORS GROWN ON IrO_2 ELECTRODE
- Analysis of Current Components Observed by Cyclic Current-Voltage Measurement in Metal-Oxide-Semiconductor Capacitors
- Electrical Characteristics of Al/CeO_2(200)/Si(100) and Al/CeO_2(111)/Si(100) Metal-Insulator-Semiconductor Structure : Electrical Properties of Condensed Matter
- Advanced 10 nm Width Silicon-on-Insulator Tri-Gate Transistors with NO Annealing of Gate Oxide Using Optimized Novel Silicon-on-Insulator Realization Technology