Chung Ilsub | Microelectronics And Device Laboratory Samsung Advanced Institute Of Technology
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概要
関連著者
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Chung Ilsub
Microelectronics And Device Laboratory Samsung Advanced Institute Of Technology
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Chung I
Microelectronics Laboratory Samsung Advanced Institute Of Technology
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Chung Ilsub
Material & Device Lab Samsung Advanced Institute Of Technology
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Chung Ilsub
Materials And Devices Lab Samsung Advanced Institute Of Technology
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CHUNG Ilsub
Microelectronics Laboratory, Materials and Device Sector, Samsung Advanced Institute of Technology
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Lee June
Microelectronics Laboratory Materials And Device Sector Samsung Advanced Institute Of Technology
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Yi Insook
Osaka Uoiversity
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Yi Insook
Material & Device Lab Samsung Advanced Institute Of Technology
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Yi Insook
Microelectronics And Device Laboratory Samsung Advanced Institute Of Technology
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Park Youngsoo
Microelectronics Laboratory Materials And Device Sector Samsung Advanced Institute Of Technology
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Lee J
Samsung Advanced Inst. Technol. Suwon Kor
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Par Youngsoo
Microelectronics Laboratory, Samsung Advanced Institute of Technology
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Park Youngsoo
Process Engineering Lab Samsung Advanced Institute Of Technology
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Heo J
Sungkyunkwan Univ. Kyunggi‐do Kor
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Kim C
Sait Suwon Kor
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Kim Chang
Materials And Devices Lab Samsung Advanced Institute Of Technology
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Yi Insook
Materials And Devices Lab Samsung Advanced Institute Of Technology
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Jang Daekyu
School Of Inforinarion And Communications Engineering Sungkyunkwan University
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Roh Yonghan
School Of Electrical And Computer Engineering Sungkyunkwan University
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Chung Ilsub
School Of Information And Communication Engineering Sungkyunkwan University
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Chung Ilsub
School Of Information & Communications Engineering Sungkyunkwan University
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JANG Dongmin
School of Info rolation and Communications Engineering, Sun gKyunKwan University
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HEO Jinhee
School of Info rolation and Communications Engineering, Sun gKyunKwan University
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Yasutake Masatoshi
Material & Device Lab, Samsung Advanced Institute of Technology
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KIM DAEIK
School of Electrical and Computer Engineering, Sungkyunkwan University
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Yasutake Masatoshi
Seiko Instruments Inc.
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Kim Daeik
School Of Electrical And Computer Engineering Sungkyunkwan University
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Yasutake M
Seiko Instruments Inc. Shizuoka Jpn
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Chung Ilsub
School of Info rolation and Communications Engineering, Sun gKyunKwan University
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Roh Yonghan
Microelectronics and Device Laboratory, Samsung Advanced Institute of Technology
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Lee J‐y
Univ. Seoul Seoul Kor
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ROH Yonghan
School of Information and Communication Engineering, Son gkyunkwan University
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PARK Youngsoo
Microelectronics Laboratory, Materials and Device Sector, Samsung Advanced Institute of Technology
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LEE Jai-Young
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology
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Lee Jai-young
Department Of Environment Engineering University Of Seoul
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Chung Ilsub
Microelectronics Laboratory Materials And Device Sector Samsung Advanced Institute Of Technology
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LEE Junekey
SFD laboratory Samsung Advanced Institute of Technology
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YASTAKE Masatoshi
Seiko Instruments
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ROH YOUGHAN
School of Electrical and Computer Engineering, Sungkyunkwan University
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Yasutake Masatoshi
Seiko Instruments & Electronics Scientific Instruments Department
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Chung Ilsub
Seiko Instruments Inc.
著作論文
- Effect of Oxygen Plasma Treatment on Hydrogen-Damaged Pt/Pb(Zr_xTi_)O_3/Pt Ferroelectric Thin-Film Capacitor
- Hydrogen-Induced Degradation of Oxygen Plasma Treated Ferroelectric Pb (Zr,Ti)O_3 Capacitor
- Hydrogen-Induced Degradation of Oxygen Plasma Treated Ferroelectric Pb (Zr,Ti) O_3 Capacitor
- Hydrogen-Induced Degradation of Oxygen Plasma Treated Ferroelectric Pb (Zr,Ti) O_3 Capacitor
- Application of Scanning Probe Microscope for Novel Characterization of Ferroelectric Capacitor
- Ferroelectric Properties of Very Thin Pb(Zr_Ti_)O_3 Film Determined by Kelvin Force Microscope
- Application of Scanning Probe Microscope(SPM) for Novel Characterization of Ferrolectric Capacitor
- Electrical properties of BLT thin films prepared by CSD(chemical Solution Deposition)method
- FERROELECTRIC PROPERTIES OF SOL-GEL DERIVED Pb(Zr, Ti)O_3 CAPACITORS GROWN ON IrO_2 ELECTRODE
- Application of Scanning Probe Microscope(SPM)for Novel Characterization of Ferrolectric Capacitor
- Electrical properties of BLT thin films prepared by CSD(chemical Solution Deposition)method
- FERROELECTRIC PROPERTIES OF SOL-GEL DERIVED Pb(Zr, Ti)O_3 CAPACITORS GROWN ON IrO_2 ELECTRODE