Jang Daekyu | School Of Inforinarion And Communications Engineering Sungkyunkwan University
スポンサーリンク
概要
関連著者
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Jang Daekyu
School Of Inforinarion And Communications Engineering Sungkyunkwan University
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Kim Wonbaek
Korea Institute Of Geology Mining And Materials
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Kim W
Pohang Univ. Sci. And Technol. Pohang Kor
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Heo J
Sungkyunkwan Univ. Kyunggi‐do Kor
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No Kwangsoo
Korea Advanced Institute Of Science And Technology
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SHIM Gunjoo
Korea Institute of Geology, Mining and Materials
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JANG Daekyu
Korea Institute of Geology, Mining and Materials,
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SUH Changyoul
Korea Institute of Geology, Mining and Materials
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Yi Insook
Osaka Uoiversity
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Yi Insook
Microelectronics And Device Laboratory Samsung Advanced Institute Of Technology
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Shim Gunjoo
Korea Institute Of Geology Mining And Materials
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Chung I
Microelectronics Laboratory Samsung Advanced Institute Of Technology
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Chung Ilsub
Material & Device Lab Samsung Advanced Institute Of Technology
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Chung Ilsub
Materials And Devices Lab Samsung Advanced Institute Of Technology
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Chung Ilsub
Microelectronics And Device Laboratory Samsung Advanced Institute Of Technology
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Chung Ilsub
School Of Information And Communication Engineering Sungkyunkwan University
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Chung Ilsub
School Of Information & Communications Engineering Sungkyunkwan University
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Suh Changyoul
Korea Institute Of Geology Mining And Materials
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JANG Dongmin
School of Info rolation and Communications Engineering, Sun gKyunKwan University
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HEO Jinhee
School of Info rolation and Communications Engineering, Sun gKyunKwan University
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Chung Ilsub
School of Info rolation and Communications Engineering, Sun gKyunKwan University
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Shin W
National Inst. Of Advanced Industrial Sci. And Technol. Nagoya
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SHIN Woosuck
Korea Advanced Institute of Science and Technology
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LEE Junekey
SFD laboratory Samsung Advanced Institute of Technology
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YASTAKE Masatoshi
Seiko Instruments
著作論文
- Development of Excess Y_2BaCuO_5 during Directional Growth of YBa_2Cu_3O_x
- Effects of Pt Doping on Microstructure of YBa_2Cu_3O_x Superconductor Prepared by Directional Solidification
- Application of Scanning Probe Microscope for Novel Characterization of Ferroelectric Capacitor
- Ferroelectric Properties of Very Thin Pb(Zr_Ti_)O_3 Film Determined by Kelvin Force Microscope