Electrical properties of BLT thin films prepared by CSD(chemical Solution Deposition)method
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概要
- 論文の詳細を見る
Recently, the ferroelectrics bismuth lanthanum titanate (Bi_<3.25>La_<0.75>Ti_3O_<12>) thin film has been expected as a novel material for FRAM device since it has a large polarization, fatigue free, and crystallized at low temperature compared to SrBi_2Ta_2O_9 material. The BLT thin film was fabricated successfully on Pt/Ti/SiO_2/Si substrate by chemical solution deposition method. The films were crystallized at the temperature range of 600〜700℃ using rapid thermal process and quartz tube furnace. X-ray diffraction shows a ferroelectric single-phase film. The spontaneous polarization (Ps) and the switching polarization of BLT film annealed at 700℃ for 2 min are 16.75 and 13.14 uC/cm^2, respectively.
- 社団法人電子情報通信学会の論文
- 2001-06-29
著者
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Kim C
Sait Suwon Kor
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Kim Chang
Materials And Devices Lab Samsung Advanced Institute Of Technology
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Yi Insook
Material & Device Lab Samsung Advanced Institute Of Technology
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Yi Insook
Materials And Devices Lab Samsung Advanced Institute Of Technology
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Chung I
Microelectronics Laboratory Samsung Advanced Institute Of Technology
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Chung Ilsub
Material & Device Lab Samsung Advanced Institute Of Technology
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Chung Ilsub
Materials And Devices Lab Samsung Advanced Institute Of Technology
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Chung Ilsub
Microelectronics And Device Laboratory Samsung Advanced Institute Of Technology
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