Electrical Characteristics of Al/CeO_2(200)/Si(100) and Al/CeO_2(111)/Si(100) Metal-Insulator-Semiconductor Structure : Electrical Properties of Condensed Matter

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Capacitance-voltage (C-V) and current-voltage (I-V) characteristics of Al/CeO_2/Si(100) metal-insulator-semiconductor structures were found to be dependent on the crystal orientations of CeO_2 thin films, which were deposited by radio-frequency magnetron sputtering. The C-V curve for the Al/CeO_2/Si(100) structure made with CeO_2 with (200)-preferred orientation (referred to as CeO_2(200)) did not show any notable hysteresis, while the Al/CeO_2/Si(100) structure made with CeO_2 with (111)-preferred orientation (referred to as CeO_2(111)) showed a counter-clockwise hysteresis, whose width was as high as 〜1.5 V. The hysteresis difference between Al/CeO_2(200)/Si(100) and Al/CeO_2(111)/Si(100) is thought due to the difference in the preferred orientation of the CeO_2 layer, and thus the stress between the CeO_2 thin film and the Si substrate. The Al/CeO_2(111)/Si(100) structure with CeO_2 of larger grains showed larger leakage current than the Al/CeO_2(200)/Si(100) structure with CeO_2 of smaller grains.
社団法人応用物理学会の論文
2001-06-01