Kim Dong-Won | Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Gyeonggi 445-701, Korea
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概要
- Kim Dong-Wonの詳細を見る
- 同名の論文著者
- Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Gyeonggi 445-701, Koreaの論文著者
関連著者
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Kim Dong-Won
Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Gyeonggi 445-701, Korea
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Kim Sung
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Roh Yonghan
School Of Electrical And Computer Engineering Sungkyunkwan University
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Park Donggun
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Oh Chang
Semiconductor Physics Research Center Department Of Semiconductor Science And Technology Chonbuk Nat
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Oh Chang
Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Gyeonggi 445-701, Korea
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Jung Young
Research Center for Time domain Nano-functional Devices and School of Electrical Engineering, Korea University, Seoul 136-713, Korea
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Bae Hyun
Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Gyeonggi 445-701, Korea
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Yamada Satoru
Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Gyeonggi 445-701, Korea
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Jin Gyoyoung
Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Gyeonggi 445-701, Korea
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Jin Gyoyoung
Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Gyeonggi 445-701, Korea
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Hwang Sung
Research Center for Time domain Nano-functional Devices and School of Electrical Engineering, Korea University, Seoul 136-713, Korea
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Hong Byoung
Research Center for Time domain Nano-functional Devices and School of Electrical Engineering, Korea University, Seoul 136-713, Korea
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Choi Luryi
Research Center for Time domain Nano-functional Devices and School of Electrical Engineering, Korea University, Seoul 136-713, Korea
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Cho Keun
Semiconductor R&D Center, Samsung Electronics, Hwasung, Gyeonggi 445-701, Korea
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Lee Sung-Young
Semiconductor R&D Center, Samsung Electronics, Hwasung, Gyeonggi 445-701, Korea
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Cho Keun
Semiconductor R&D Center, Samsung Electronics, Hwasung, Gyeonggi 445-701, Korea
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Lee Sung-Young
Semiconductor R&D Center, Samsung Electronics, Hwasung, Gyeonggi 445-701, Korea
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Yamada Satoru
Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Gyeonggi 445-701, Korea
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Park Donggun
Semiconductor R&D Center, Samsung Electronics, Hwasung, Gyeonggi 445-701, Korea
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Kim Dong-Won
Semiconductor R&D Center, Samsung Electronics, Hwasung, Gyeonggi 445-701, Korea
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Bae Hyun
Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Gyeonggi 445-701, Korea
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Roh Yonghan
School of Information and Communication Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Korea
著作論文
- Experimental Investigations on Ballistic Transport in Multi-Bridged Channel Field Effect Transistors
- Advanced 10 nm Width Silicon-on-Insulator Tri-Gate Transistors with NO Annealing of Gate Oxide Using Optimized Novel Silicon-on-Insulator Realization Technology