Hong Byoung | Research Center for Time domain Nano-functional Devices and School of Electrical Engineering, Korea University, Seoul 136-713, Korea
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概要
- Hong Byoung Hakの詳細を見る
- 同名の論文著者
- Research Center for Time domain Nano-functional Devices and School of Electrical Engineering, Korea University, Seoul 136-713, Koreaの論文著者
関連著者
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Park Donggun
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kim Dong-Won
Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Gyeonggi 445-701, Korea
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Jung Young
Research Center for Time domain Nano-functional Devices and School of Electrical Engineering, Korea University, Seoul 136-713, Korea
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Hwang Sung
Research Center for Time domain Nano-functional Devices and School of Electrical Engineering, Korea University, Seoul 136-713, Korea
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Hong Byoung
Research Center for Time domain Nano-functional Devices and School of Electrical Engineering, Korea University, Seoul 136-713, Korea
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Choi Luryi
Research Center for Time domain Nano-functional Devices and School of Electrical Engineering, Korea University, Seoul 136-713, Korea
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Cho Keun
Semiconductor R&D Center, Samsung Electronics, Hwasung, Gyeonggi 445-701, Korea
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Lee Sung-Young
Semiconductor R&D Center, Samsung Electronics, Hwasung, Gyeonggi 445-701, Korea
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Cho Keun
Semiconductor R&D Center, Samsung Electronics, Hwasung, Gyeonggi 445-701, Korea
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Lee Sung-Young
Semiconductor R&D Center, Samsung Electronics, Hwasung, Gyeonggi 445-701, Korea
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Park Donggun
Semiconductor R&D Center, Samsung Electronics, Hwasung, Gyeonggi 445-701, Korea
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Kim Dong-Won
Semiconductor R&D Center, Samsung Electronics, Hwasung, Gyeonggi 445-701, Korea
著作論文
- Experimental Investigations on Ballistic Transport in Multi-Bridged Channel Field Effect Transistors