Park Donggun | Semiconductor R&d Center Samsung Electronics Co. Ltd.
スポンサーリンク
概要
関連著者
-
Park Donggun
Semiconductor R&d Center Samsung Electronics Co. Ltd.
-
Cho Hye
Semiconductor R&d Center Samsung Electronics Co. Ltd.
-
Choi Yang-kyu
Division Of Electrical Engineering School Of Eecs Kaist
-
Choe Jeong
Semiconductor R&d Center Samsung Electronics Co. Ltd.
-
Yoon Euijoon
School Of Electronic And Electrical Engineering Kyungpook National University
-
Lee Jong-ho
School Of Eecs Engineering Kyungpook National University
-
Park Tai-su
School Of Material Science Engineering Seoul National University
-
Kim Dong-Won
Semiconductor R&D Center, Samsung Electronics Co., Ltd., Hwasung, Gyeonggi 445-701, Korea
-
Jung Young
Research Center for Time domain Nano-functional Devices and School of Electrical Engineering, Korea University, Seoul 136-713, Korea
-
Park Tai-su
School of Materials Science and Engineering, Seoul National University, Shillim, Kwanak, Seoul 151-744, Korea
-
Hwang Sung
Research Center for Time domain Nano-functional Devices and School of Electrical Engineering, Korea University, Seoul 136-713, Korea
-
Hong Byoung
Research Center for Time domain Nano-functional Devices and School of Electrical Engineering, Korea University, Seoul 136-713, Korea
-
Choi Luryi
Research Center for Time domain Nano-functional Devices and School of Electrical Engineering, Korea University, Seoul 136-713, Korea
-
Cho Keun
Semiconductor R&D Center, Samsung Electronics, Hwasung, Gyeonggi 445-701, Korea
-
Lee Sung-Young
Semiconductor R&D Center, Samsung Electronics, Hwasung, Gyeonggi 445-701, Korea
-
Cho Keun
Semiconductor R&D Center, Samsung Electronics, Hwasung, Gyeonggi 445-701, Korea
-
Lee Sung-Young
Semiconductor R&D Center, Samsung Electronics, Hwasung, Gyeonggi 445-701, Korea
-
Cho Hye
Semiconductor R&D Center, Samsung Electronics Co. Ltd., Korea
-
Park Donggun
Semiconductor R&D Center, Samsung Electronics Co. Ltd., Korea
-
Park Donggun
Semiconductor R&D Center, Samsung Electronics, Hwasung, Gyeonggi 445-701, Korea
-
Park Donggun
Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24, Nongseo-ri, Kiheung-yup, Youngin, Kyunggi-do, 499-711, Republic of Korea
-
Kim Dong-Won
Semiconductor R&D Center, Samsung Electronics, Hwasung, Gyeonggi 445-701, Korea
-
Lee Choong-Ho
Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24, Nongseo-ri, Kiheung-yup, Youngin, Kyunggi-do, 499-711, Republic of Korea
-
Han Jin-Woo
Division of Electrical Engineering Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology, 373-1 Guseong-dong, Yuseong-gu, Daejeon, 305-701, Republic of Korea
-
Choe Jeong
Semiconductor R&D Center, Samsung Electronics Co. Ltd., Korea
-
Choi Yang-Kyu
Division of Electrical Engineering Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology, 373-1 Guseong-dong, Yuseong-gu, Daejeon, 305-701, Republic of Korea
-
Lee Jong-Ho
School of EECS and ISRC, Seoul National University, Seoul 151-742, Korea
著作論文
- Experimental Investigations on Ballistic Transport in Multi-Bridged Channel Field Effect Transistors
- Threshold Voltage Behavior of Body-Tied FinFET (OMEGA MOSFET) with Respect to Ion Implantation Conditions
- Hot Carrier Reliability Study in Body-Tied Fin-Type Field Effect Transistors