Threshold Voltage Behavior of Body-Tied FinFET (OMEGA MOSFET) with Respect to Ion Implantation Conditions
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概要
- 論文の詳細を見る
The body-tied finFET (called OMEGA ($\Omega$) metal oxide semiconductor field effect transistor (MOSFET)) exhibits positive characteristics as a future complementary metal oxide semiconductor (CMOS) device. The $\Omega$ MOSFETs have unique features such as high heat dissipation to the Si substrate, no floating body effect, and low defect density, while having the key advantages of the silicon-on-insulator (SOI)-based finFET characteristics. In order to increase the threshold voltages on both the $\Omega$ NMOSFET and the $\Omega$ PMOSFET while keeping the conventional gate electrodes (n+ polysilicon and p+ polysilicon gates for NMOSFET and PMOSFET, respectively), the device characteristics of the $\Omega$ MOSFETs have been characterized with halo ion implantation doses for the $\Omega$ NMOSFET and lightly doped drain (LDD) doses for the $\Omega$ PMOSFET. It was shown that the $V_{\text{TH}}$ adjustment could be partially achieved.
- 2004-04-15
著者
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Cho Hye
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Choe Jeong
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Park Donggun
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Yoon Euijoon
School Of Electronic And Electrical Engineering Kyungpook National University
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Lee Jong-ho
School Of Eecs Engineering Kyungpook National University
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Park Tai-su
School Of Material Science Engineering Seoul National University
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Park Tai-su
School of Materials Science and Engineering, Seoul National University, Shillim, Kwanak, Seoul 151-744, Korea
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Cho Hye
Semiconductor R&D Center, Samsung Electronics Co. Ltd., Korea
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Park Donggun
Semiconductor R&D Center, Samsung Electronics Co. Ltd., Korea
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Choe Jeong
Semiconductor R&D Center, Samsung Electronics Co. Ltd., Korea
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Lee Jong-Ho
School of EECS and ISRC, Seoul National University, Seoul 151-742, Korea
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