Effects of the Microstructure of Platinum Electrode on the Oxidation Behavior of TiN Diffusion Barrier Layer
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概要
- 論文の詳細を見る
The effects of the microstructure of a platinum bottom electrode on the oxidation behavior of a TiN diffusion barrier layer were investigated. The microstructures of the bottom Pt electrodes were varied from a columnar structure to a granular one by adding oxygen to the sputtering gas during the sputter-deposition and subsequent vacuum annealing process. It was found that a Pt film with a granular microstructure significantly retarded the oxidation of the underlying TiN barrier layer during annealing at 650°C for 30 min in air. However, the Pt film with a conventional columnar microstructure was unable protect the TiN layer from oxidation at temperatures as low as 450°C. The improved oxidation resistance of the barrier layer, as a result of modifying the microstructure of Pt films, is expected to contribute to the implementation of high-dielectric and ferroelectric capacitors into high-density memory devices.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2003-02-15
著者
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Ha Jowoong
Inostek Inc.
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Park Dong-yeon
Inostek Inc.
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Lee Dong-su
Inostek Inc
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Woo Hyun-jung
Inostek Inc
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Hwang Cheol
School Of Mat. Sci. And Eng. Seoul National Univ
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Yoon Euijoon
School Of Electronic And Electrical Engineering Kyungpook National University
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Park Dong-Yeon
Inostek Inc., 356-1 Gasan-dong, Keumchun-gu, Seoul 153-023, Korea
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Ha Jowoong
Inostek Inc., 356-1 Gasan-dong, Keumchun-gu, Seoul 153-023, Korea
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Yoon Euijoon
School of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742, Korea
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Woo Hyun-Jung
Inostek Inc., 356-1 Gasan-dong, Keumchun-gu, Seoul 153-023, Korea
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Lee Dong-Su
Inostek Inc., 356-1 Gasan-dong, Keumchun-gu, Seoul 153-023, Korea
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