Optimization of Postannealing Process for Low Temperature MOCVD (Ba, Sr) TiO_3 Thin Films
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概要
- 論文の詳細を見る
30-run-thick (Ba,Sr)TiO_3 thin films deposited by liquid source MOCVD at 400℃ were post-annealed before top electrode deposition in order to remove the hydrocarbon in thin films. By annealing at a low temperature of 500℃ and a high temperature of 700℃, high dielectric constant (170) an low leakage current density (less than 1.0×10^<-8> A/cm^2 at ±1V) were achieved.
- 社団法人電子情報通信学会の論文
- 1999-07-23
著者
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Hwang Cheol
School Of Materials Science And Engineering Seoul National University
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Hwang Cheol
School Of Material Science And Engineering Seoul National University
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Hwang Chul
Jusung Engineering
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Han Young
Jusung Engineering
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Hwang Cheol
School Of Mat. Sci. And Eng. Seoul National Univ
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PARK Jaehoo
School of Materials Science & Engineering, Seoul National University
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Park Jaehoo
School Of Material Science And Engineering Seoul National University
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Yang Cheol
Jusung Engineering
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Yang Doo
Jusung Engineering
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