Effect of Structural Properties on Electrical Properties of Lanthanum Oxide Thin Film as a Gate Dielectric
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概要
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The electrical properties of lanthanum oxide was grown by using metal organic chemical vapor deposition (MOCVD) were investigated from the change of structural properties which occurred during the post-annealing process. The as-grown film had a dielectric constant of 18.8, and capacitance equivalent oxide thickness of 1.7 nm. The leakage current density of the film was measured as $2.4\times 10^{-4}$ A/cm2 at $-1$ MV/cm. When the film was annealed at 900°C, the dielectric constant decreased with the increase of the interfacial layer.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-06-15
著者
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Hwang Chul
Jusung Engineering
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Choi Doo
Department Of Advanced Material Science And Engineering Yonsei University
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JUN Jin
Department of Ceramic Engineering, Yonsei University
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Oh Ki
Jusung Engineering Co. Ltd.
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Kim Keung
Division Of Ceramics Korea Institute Of Science And Technology
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Oh Ki
Jusung Engineering Co., Ltd., Kyunggi-Do 464-890, Korea
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Hwang Chul
Jusung Engineering Co., Ltd., Kyunggi-Do 464-890, Korea
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Kim Keung
Division of Ceramics, Korea Institute of Science and Technology, Seoul P. O. Box 131, Korea
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Jun Jin
Department of Ceramic Engineering, Yonsei University, Seoul 120-749, Korea
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