A Study on the Lanthanum Aluminate Thin Film as a Gate Dielectric Material
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概要
- 論文の詳細を見る
The lanthanum aluminate (LAO) films with three kinds of Al2O3 compositions were deposited by metal-organic chemical vapor deposition (MOCVD) method. The electrical and structural properties of the LAO thin films were investigated and compared with those of each other films. The LAO films had flat surfaces for all deposition and annealing conditions. With the changes of the film composition, the LAO films showed various properties such as the dielectric constant and the thickness of interfacial layer. It is thought that the LAO film with specific composition has a possibility to be used as a high-$k$ gate dielectric in future devices.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-11-15
著者
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Choi Doo
Department Of Advanced Material Science And Engineering Yonsei University
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JUN Jin
Department of Ceramic Engineering, Yonsei University
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Jun Jin
Department of Ceramic Engineering, Yonsei University, 134 Shinchon-dong, Seodaemun-gu, Seoul 120-749, Korea
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