Characterization of SiC:H films deposited using HMDS precursor with C_2H_2 dilution gas by remote PECVD system
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概要
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Amorphous SiC:H films were deposited on (100) silicon wafer by remote-Plasma Enhanced Chemical Vapor Deposition system in the temperature range of 400°C-450°C. Hexamethyldisilane (HMDS) and C2H2 gas were used as a precursor and a dilution gas, respectively. The lower deposition temperature and lower sp3/sp2 carbon bonding ratio made lower dielectric constant.
- 2009-05-01
著者
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CHO Sung
Department of Ceramic Engineering, Yonsei University
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CHOI Doo
Department of Ceramic Engineering, Yonsei University
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Cho Sung
Department Of Urology Seoul National University Hospital
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Choi Doo
Department Of Ceramic Engineering Yonsei University
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Choi Doo
Department Of Advanced Material Science And Engineering Yonsei University
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Cho Sung
Department Of Ceramic Engineering Yonsei University
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Cho Sung
Department Of Anatomy Seoul National University College Of Medicine
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