A Study on the Crystallization Behavior of Nitrogen Doped Ge2Sb2Te5 Thin Film
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概要
- 論文の詳細を見る
We investigated the crystallization behaviors of nitrogen doped Ge2Sb2Te5 thin films deposited in various nitrogen gas flow rates by means of the 4-point probe technique, X-ray diffraction and transmission electron microscopy (TEM), and we mapped the change of crystallization behavior on annealing temperatures. Nitrogen doping resulted in an increase of crystallization temperature from amorphous to fcc structure and maintained the fcc structure up to a higher annealing temperature than un-doped film did. However, crystallization behavior in heavily nitrogen-doped film occurred from an amorphous directly to a hexagonal state, skipping the fcc crystallization step.
- Japan Society of Applied Physicsの論文
- 2005-01-10
著者
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Park Young
Hynix Semiconductor Inc. Memory Research & Development Division
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Choi Doo
Department Of Advanced Material Science And Engineering Yonsei University
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JUN Jin
Department of Ceramic Engineering, Yonsei University
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Hong Suk
Hynix Semiconductor Inc. Memory Research & Development Division
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Kim Suk
Department Of Electronics Engineering And The Research Institute Of Computer Information And Communi
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Choi Doo
Department of Ceramic Engineering, Yonsei University, 134 Shinchon-Dong, Seodaemun-Ku, Seoul 120-749, Korea
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Hong Suk
Hynix Semiconductor Inc., Memory Research & Development Division, San 136-1, Ami-Ri Bubal-Eub lchon-Si, Kyongki-Do 467-860, Korea
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Kim Suk
Department of Ceramic Engineering, Yonsei University, 134 Shinchon-Dong, Seodaemun-Ku, Seoul 120-749, Korea
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Jun Jin
Department of Ceramic Engineering, Yonsei University, 134 Shinchon-Dong, Seodaemun-Ku, Seoul 120-749, Korea
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Park Young
Hynix Semiconductor Inc., Memory Research & Development Division, San 136-1, Ami-Ri Bubal-Eub lchon-Si, Kyongki-Do 467-860, Korea
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