Electrical properties of Al_2O_3/La_2O_3/Al_2O_3 films using various tunnel oxide thicknesses for non-volatile memory device applications
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概要
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The electrical properties (including memory windows and leakage current densities) of Al2O3/La2O3/Al2O3 (ALA) films equipped with 5 nm, 7.5 nm, and 10 nm tunnel oxide layer were investigated. The dielectric constants of all of the tunnel oxide films using Al2O3 were the same and the equivalent oxide thickness was dependent on film thickness. The optimized conditions were exhibited in the ALA films with a 5 nm tunnel oxide. The memory window of the ALA films using the 5 nm tunnel oxide was about 1.31 V in the program condition (11 V for 10 ms) and in the erase condition (-13 V for 100 ms). Measurement of the leakage current density showed that all of the films are sufficient for use with flash memory device.
- 2009-05-01
著者
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Kim Hyo
Department of Internal Medicine, Seoul National University College of Medicine, Cardiovascular Labor
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CHOI Doo
Department of Ceramic Engineering, Yonsei University
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Kim Hyo
Department Of Ceramic Engineering Yonsei University
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Cha Seung
Department Of Ceramic Engineering Yonsei University
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Choi Doo
Department Of Advanced Material Science And Engineering Yonsei University
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Choi Doo
Dep. Of Materials Sci. And Engineering Yonsei Univ.
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Kim Hyo
Department Of Biological Sciences University Of Ulsan
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Kim Hyo
Department Of Agro-environmental Sciences Faculty Of Agriculture Kyushu University
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