Dependence of Buffer Layer on the Distribution of InAs Quantum Dots
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概要
- 論文の詳細を見る
We have investigated the dependence of the distributions of InAs quantum dots on the thickness of GaAs buffer layers grown on 2°-off (100) GaAs substrates by metalorganic chemical vapor deposition. When the thickness of the GaAs buffer layers was changed from 7 ML to 70 ML, the terrace widths were transformed from 25 nm to 75 nm due to the bunching effects of Ga adatoms. The magnitudes of the size and the density of InAs quantum dots on 2°-off GaAs (100) substrates, whose terrace widths, were changed by the thickness of the GaAs buffer layer, were successfully manipulated. Wire-shaped InAs quantum dots could also be fabricated by controlling the size and the density of the quantum dots.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-04-15
著者
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Hyon Chan
Semiconductor Materials Laboratory Korea Institute Of Science And Technology
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Min Byung
Semiconductor Materials Laboratory Korea Institute Of Science And Technology
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Kim Eun
Semiconductor Materials Laboratory Korea Institute Of Science And Technology
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Park Se
Semiconductor Materials Laboratory Korea Institute Of Science And Technology
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Kim Tae
Department Of Anesthesia And Pain Medicine School Of Medicine Pusan National University
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Park Young
Semicondactor Materials Laboratory Korea Insrirute Of Science And Technology
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Kim Hyo
Department Of Agro-environmental Sciences Faculty Of Agriculture Kyushu University
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Park Se
Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P. O. Box 131, Cheongryang, Seoul 130-650, Korea
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Park Young
Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P. O. Box 131, Cheongryang, Seoul 130-650, Korea
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Hyon Chan
Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P. O. Box 131, Cheongryang, Seoul 130-650, Korea
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Kim Hyo
Department of Physics, Kwangwoon University, 447-1, Wolgye-dong, Nowon-ku, Seoul 139-701, Korea
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Min Byung
Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P. O. Box 131, Cheongryang, Seoul 130-650, Korea
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Kim Tae
Department of Physics, Kwangwoon University, 447-1, Wolgye-dong, Nowon-ku, Seoul 139-701, Korea
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Kim Eun
Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P. O. Box 131, Cheongryang, Seoul 130-650, Korea
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Kim Tae
Department of Advanced Materials Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Republic Korea
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