Nano-Structure Fabrication and Manipulation by the Cantilever Oscillation of an Atomic Force Microscope

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1999-12-30

著者

• Kim Yong

  Semiconductor Materials and Devices Lab, Korea Institute of Science and Technology

• AHN Doyeol

  Institute of Quantum Information Processing and Systems (iQUIPS), University of Seoul

• KIM Eun

  Semiconductor Materials Research Center Korea Institute of Science and Technology

• HWANG Sung

  School of Electrical Engineering, Korea University

• Kim E

  Korea Inst. Sci. And Technol. Seoul Kor

• Kim Yousoo

  Surface Chemistry Laboratory

• Kim Yousoo

  Surface Chemistry Laboratory Riken

• Kim E

  Hanyang Univ. Seoul Kor

• Hwang Sungwoo

  Department Of Electronics Engineering Korea University:institute Of Quantum Information & Proces

• Hyon C

  Korea Inst. Sci. And Technol. Seoul Kor

• Hwang Sung

  School Of Electrical Engineering Korea University:institute Of Quantum Information Processing And Sy

• Hwang Sung

  Fundamental Research Laboratories Nec Corporation

• Hwang Sung

  School Of Electrical Engineering Korea University

• Kim Yong

  Semiconductor Devices Laboratory Korea Institute Of Science And Technology

• Kim Y

  Lg Electronics Seoul Kor

• Kim Eun

  Semiconductor Materials Laboratory Korea Institute Of Science And Technology

• Ahn Doyeol

  Institute Of Quantum Information & Processing Systems University Of Seoul

• Hwang S

  Department Of Electronics And Computer Engineering Korea University

• HYON Chan

  School of Electrical Engineering, Korea University

• CHOI Seung

  School of Electrical Engineering, Korea University

• Koh E

  Seoul Branch Korea Basic Science Institute

• Kim Y

  Surface Chemistry Laboratory Riken

• Choi Seung

  School Of Electrical Engineering And Inter-university Semiconductor Research Center(isrc) Seoul Nati

• Choi Seung

  School Of Electrical Engineering Korea University

• Hyon Chan

  School Of Electrical Engineering Korea University

• Hyon Chao

  School of Electrical Engineering, Korea University

• Kim Yongjo

  Surface Chemistry Laboratory, RIKEN

• HWANG Sung

  Institute of Quantum Information Processing and Systems, University of Seoul:Department of Electronic Engineering, Korea University

関連論文

• A design of novel IGBT with oblique trench gate (Silicon devices and materials)
• Influence of Defect Segregation on the Electrical Properties of Nb-doped SrTiO_3 Grain Boundary Layer
• Electrical Characteristics of Atomic Layer Deposited Tungsten Nitride Diffusion Barrier for Cu Interconnects(Session 3A : Emerging Device Technology 2)
• Electrical Characteristics of Atomic Layer Deposited Tungsten Nitride Diffusion Barrier for Cu Interconnects(Session 3A : Emerging Device Technology 2)
• Single-Electron Transistors with Sidewall Depletion Gates on a Silicon-On-Insulator Nano-Wire
• Single Electron Transistors with Sidewall Depletion Gates on a Silicon-On-Insulator Nano-Wire
• Direct Transport Measurements through an Ensemble of INAS Self-assembled Quantum Dots
• Electrical Properties of Electron-Beam Exposed Silicon Dioxides and Their Application to Nano-devices
• Dependence of Buffer Layer on the Distribution of InAs Quantum Dots
• Facet Evolution of Al_Ga_As/GaAs Multilayers Grown on Mesa-Patterned GaAs Substrate
• A design of Novel IGBT with Oblique Trench Gate(Session 3A : Emerging Device Technology 2)
• A design of Novel IGBT with Oblique Trench Gate(Session 3A : Emerging Device Technology 2)
• Stress-Driven Formation of InGaAs Quantum Dots on GaAs with Sub-Micron Platinum Pattern
• A Physics-Based, SPICE (Simulation Program with Integrated Circuit Emphasis)-Compatible Non-Quasi-Static MOS (Metal-Oxide-Semiconductor) Transient Model Based on the Collocation Method
• ED2000-58 / SDM2000-58 Implementation of single electron circuit simulation by SPICE: KOSEC-SPICE
• ED2000-58 / SDM2000-58 Implementation of single electron circuit simulation by SPICE : KOSEC-SPICE
• Comparison of TiN Films Deposited Using Tetrakisdimethylaminotitanium and Tetrakisdiethylaminotitanium by the Atomic Layer Deposition Method
• Compositional Variations of TiAlN Films Deposited by Metalorganic Atomic Layer Deposition Method
• Scanning Thnneling Microscopy and Near Edge X-ray Absorption Fine Structure Studies of Adsorption of Trans-2-butene on Pd(110)
• Maskless Selective Epitaxial Growth on Patterned GaAs Substrates by Metalorganic Chemical Vapor Deposition
• Electrical Properties of Heavily Carbon-Doped GaAs Epilayers Grown by Atmospheric Pressure Metalorganic Chemical Vapor Deposition Using CBr_4
• Effects of Bi Content on Electrical Properties of Pt/SrBi_2Nb_2O_9/Si Ferroelectric Gate Structure
• Effects of Bi Content on Electrical Properties of Pt/SrBi_2Nb_2O_9/Si Ferroelectric Gate Structure
• Exciton Binding Energies in Zincblende GaN/AlGaN Quantum Wells
• Spontaneous Polarization and Piezoelectric Effects on Inter-Subband Scattering Rate in Wurtzite GaN/AlGaN Quantum-Well : Optics and Quantum Electronics
• Screening Effects on Electron-Longitudinal Optical-Phonon Intersubband Scattering in Wide Quantum Well and Comparison with Experiment
• Negative Resistance of AlGaAs Diodes Co-doped with Si and Mn
• DC Transport Characteristics of Lambda DNA Molecules and Effect of RF Signals
• Electrical Transport Properties of Au-Doped Deoxyribonucleic Acid Molecules
• Formation of Electrical Interconnects by Self-Trapping of Deoxyribonucleic Acid Molecules
• Generation of Local Magnetic Field by Nano Electro-Magnets
• Characteristics of pulse plasma enhanced atomic layer deposition of tungsten nitride diffusion barrier for copper interconnect
• Characteristics of pulse plasma enhanced atomic layer deposition of tungsten nitride diffusion barrier for copper interconnect
• A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
• Metal Oxide Semiconductor Field Effect Transistor Characteristics with Iridium Gate Electrode on Atomic Layer Deposited ZrO_2 High-k Dielectrics
• Improvement of the Reliability of a Cu/W-N/SiOF Multilevel Interconnect by Inserting Plasma Enhanced Chemical Vapor Deposited W-N Thin Film
• Fabrication of single electron transistors with molecular tunnel barriers using AC dielectrophoresis technique
• 1次元細線における単一電子トラップ
• 1次元細線における単一電子トラップ
• ED2000-66 / SDM2000-66 Improvement of Memory windows in YMnO_3/Si Ferroelectric Gate FET
• ED2000-66 / SDM2000-66 Improvement of Memory windows in YMnO_3/Si Ferroelectric Gate FET
• Surface Diffusion and Interaction of Metastable Formate on Ni(110) Investigated by Low-temperature Scanning Tunneling Microscopy
• Characteristic Configuration of Cis-2-butene Molecule on Pd(110) Determined by Scanning Thnneling Microscopy
• Scanning Tunneling Microscopy Study of Water Molecules on Pd(110) at Cryogenic Temperature
• Single-Molecule Imaging and Repositioning of 1,3-Butadiene Adsorbed on Pd(110) Surface
• A New Software-based Impedance Matching Technique for Silicon RF ICs
• A New Software-based Impedance Matching Technique for Silicon RF ICs
• A New Software-based Impedance Matching Technique for Silicon RF ICs
• Tungsten Nanodot Arrays Patterned Using Diblock Copolymer Templates
• Effect of hydrogen annealing on electrical properties of Bi-layered perovskite thin films
• Effect of hydrogen annealing on electrical properties of Bi-layered perovskite thin films
• Effects of Rapid Thermal Annealing on the Electrical Properties of Cobalt Contact to p-GaN
• Electrical Characteristics of Pt/SrBi_2 Ta_2O_9/Ta_2O_5/Si Using Ta_2O_5 as the Buffer Layer
• Direct Observation of Conformational Isomers of (CH_3S)_2 Molecules on Cu (111)
• A unified analytical SOI MOSFET model for fully-and partially-depleted SOI devices
• Enhancement of Selective Chemical Vapor Deposition of Copper by Nitrogen Plasma Pretreatment
• Growth and Characterization of Triangular InGaAs/GaAs Quantum Wire Structures Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
• 21aTG-8 INTERACTION BETWEEN CARBON NANOTUBES AND ORGANIC MOLECULES
• High frequency gate bias response of carbon nanotube field effect transistor
• Relativistic Entanglements of Spin 1/2 Particles with General Momentum(Condensed Matter and Statistical Physics)
• Nano-Structure Fabrication and Manipulation by the Cantilever Oscillation of an Atomic Force Microscope
• Effects of Morphological Changes of Pt/SrBi_2Ta_2O_9 Interface on the Electrical Properties of Ferroelectric Capacitor
• Electrical Properties of Pt/SrBi_2Ta_2O_9/CeO_2/SiO_2/Si Structure for Nondestruetive Readout Memory
• N_2^+ Implantation Approaches for Improving Thermal Stability of Cu/Mo/Si Contact Structure
• Characteristics of Metal/Ferroelectric/Insulator/Semiconductor Field Efffect Transistors Using a Pt/SrBi_2Ta_2O_9/Y_2O_3/Si Structure
• Fabrication of Metal-Ferroelectric-Insulator-Semiconductor Field Effect Transistor (MEFISFET) Using Pt-SrBi_2Ta_2O_9-Y_2O_3-Si Structure
• Electronic and Optical Properties of 1.55μm GaInNAs/GaAs Quantum-Well Structures
• Effects of Rapid Thermal Annealing on the Structural and Optical Properties of InAs/GaAs Self-Assembled Quantum Dots
• The Characteristics of Nitrogen Implanted Tungsten Film as a New Diffusion Barrier for Metal Organic Chemical Vapor Deposited Cu Metallization
• Characteristics of Quantum wire structures grown by low pressure MOCVD
• Characteristics of Quantum wire structures grown by low pressure MOCVD
• Influence of Grain boundary Layers on the Dielectric Relaxation of Nb-Doped SrTiO_3
• Ellipsometric Study of Self-Assembled InAs/GaAs Quantum Dots
• Highly Conductive Tungsten Thin Films Prepared by the Plasma-Assisted Silane Reduction Process
• Effects of NH_3 Plasma Treatment on Methyl Silsequioxane for Copper Multi-Level Interconnect(Semiconductors)
• Upright Structuring of Functional Carboxylate Anchored on Benzoate/Cu(110) Molecular Template Studied by Scanning Tunneling Microscopy
• Improved Crystalline Quality of GaN by Substrate Ion Beam Pretreatment
• Implantation of N Ions on Sapphire Substrate for Improvement of GaN Epilayer
• Electrical Characteristics of Pt/SrBi_2Ta_2O_9/Ta_2O_5/Si Using Ta_2O_5 as the Buffer Layer
• Electronic Properties of InGaAs/GaAs Strained Coupled Quantum Dots Modeled by Eight-Band k・p Theory
• Performance of the Plasma-Deposited Tungsten Nitride Diffusion Barrier for Al and Au Metallization
• Optical Gain in Wurtzite ZnO/ZnMgO Quantum Well Lasers
• Effects of Annealing Conditions on the Crystallization and Grain Growth of Metastable Ge_2Sb_2Te_5
• A unified analytical SOI MOSFET model for fully- and partially-depleted SOI devices
• Observation of 77 K Staircase I-V Characteristics in 2DEG's Irradiated by a Focused Ion Beam
• Single Electron Digital Phase Modulator
• Advantages of RuO_x Bottom Electrode in the Dielectric and Leakage Characteristics of (Ba,Sr)TiO_3 Capacitor
• Luminescence from the Thermally Treated Cerium Oxide on Silicon
• Self-Assembly and Scanning Tunneling Microscopy Tip-Induced Motion of Ferrocene Adamantane Trithiolate Adsorbed on Au(111)
• A Proposal of Pt/SrBi_2Ta_2O_9/CeO_2/Si Structure for Non Destructive Read Out Memory Devices
• High Performance of W-B-N Schottky Contact to GaAs
• Scanning Tunneling Microscopy Observations of Benzoic Acid Molecules Coadsorbed with Single-Walled Carbon Nanotubes on Au(111) surface
• Effect of Substituent Position on Molecular Assembly: Hydrogen-Bonded Arrangement of Aminobenzoates Adsorbed on Cu(110)
• Transmission Electron Microscopy Study on the Crystallization of Sb–Se–Te Ternary Alloys
• A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
• Microstructural Investigation of SexTe100-x Thin Films Deposited on Si(100) Substrates by X-ray Diffractometer and Transmission Electron Microscopy Analysis
• Microwave Characterization of a Single Wall Carbon Nanotube Bundle
• Organic Electrolyte Based Pulsed Nanoplating and Fabrication of Carbon Nanotube Network Transistors
• Tunneling-Electron-Induced Hopping of Methylthiolate on Cu(111)
• Direct Observation of Conformational Isomers of (CH3S)2 Molecules on Cu (111)

もっと見る 閉じる

スポンサーリンク