Atomic Layer Etching of Si(100) at Room Temperature
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概要
- 論文の詳細を見る
Atomic layer etching of Si(100) has been investigated by alternated chlorine adsorption and Ar^+ ion irradiation. As the Ar^+ ion source, helicon plasma has been used to invoke the surface reaction of Si with the adsorbed chlorine. In order to achieve the atomic layer etching of Si, the Ar^+ ion acceleration energy should be above 20eV. The self-limited etch rate was measured to be half monolayer per cycle, which was 0.68Å per cycle. The roughness of Si surface increased during the etching in about 22%.
- 社団法人電子情報通信学会の論文
- 2001-06-28
著者
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Kim Bum
Department Of Chemical Engineering Sungkyunkwan University
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Cho Sung
Department Of Anatomy Seoul National University College Of Medicine
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Chung Sae
Department of Chemical Engineering, Sungkyunkwan University
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Chung Sae
Department Of Chemical Engineering Sungkyunkwan University
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Cho Sung
Department of Chemical Engineering, Sungkyunkwan University
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