Chemical vapor infiltration (CVI) SiC whisker on carbon woven fabric for filter applications
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概要
- 論文の詳細を見る
β-silicon carbide whiskers have been synthesized on a carbon fabric by a vapor-solid (VS) mechanism using the Chemical Vapor Infiltration (CVI) process. Optimum processing conditions for SiC whisker growth were determined by mapping of SiC deposition behavior. SiC was deposited on a carbon fabric substrate as a film or whiskers, depending on processing conditions. The mean diameter and line density of the whiskers was the highest at an input gas ratio of 50. As temperature increases, the mean diameter of the whiskers increased and the line density of whiskers decreased. In the optimum processing conditions, whiskers grew uniformly with high growth density and formed a networking structure between each of the carbon filaments resulting in a structure suitable for filter applications.
- 公益社団法人 日本セラミックス協会の論文
- 2009-05-01
著者
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Kim Jun
Department of Internal Medicine, Chonnam University Medical School
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Cho Sung
Department Of Urology Seoul National University Hospital
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Kim Ik
Department Of Obstetrics And Gynecology Yonsei University College Of Medicine
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Kim Ik
Department Of Ceramic Engineering Yonsei University
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Choi Doo-jin
Department Of Ceramic Engineering Yonsei University
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Cho Sung
Department Of Anatomy Seoul National University College Of Medicine
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Kim Jun
Department Of Ceramic Engineering Yonsei University
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Kim Jun
Department Of Bioengineering University Of California Los Angeles
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KIM Jun
Department of Advanced Material Science and Engineering, Yonsei University
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