Effects of Annealing Process on Dielectric Properties of (Ba,Sr)TiO3 Thin Films Grown by RF Magnetron Sputtering
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概要
- 論文の詳細を見る
Single phase thin films of (Ba0.5Sr0.5)TiO3 have been prepared by single target RF magnetron sputtering. Through post-annealing process in box furnace at 1100°C for 1 h, we have been able to improve the dielectric properties; dielectric permittivity, dielectric loss, and tunability. The change in dielectric properties before and after post-annealing is attributed to the change in film strain and the contraction in film lattice.
- Japan Society of Applied Physicsの論文
- 2005-09-10
著者
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Choi Doo-jin
Department Of Ceramic Engineering Yonsei University
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KANG Chong-Yun
Thin Film Material Research Center, Korea Institute of Science and Technology
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KIM Hyun-Jai
Thin Film Material Research Center, Korea Institute of Science and Technology
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Yoon Seok-jin
Thin Film Material Research Center Korea Institute Of Science And Technology
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Choi Ji-won
Thin Film Material Research Center Korea Institute Of Science And Technology
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Ha Jong-yoon
Thin Film Material Research Center Korea Institute Of Science And Technology
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Choi Doo-Jin
Department of Ceramic Engineering, Yonsei University, Seoul 120-749, Korea
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Kang Chong-Yun
Thin Film Materials Research Center, KIST, Seoul 130-650, Korea
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Yoon Seok-Jin
Thin Film Materials Research Center, KIST, Seoul 130-650, Korea
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Karmanenko S.
St. Petersburg Electrotechnical University, St. Petersburg, Russia
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Kang Chong-Yun
Thin Film material Research Center, KIST, P.O. Box 131, Cheongryang, Seoul 130-650, Korea
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Choi Ji-Won
Thin Film Materials Research Center, KIST, Seoul 130-650, Korea
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Kim Hyun-Jai
Thin Film Materials Research Center, KIST, Seoul 130-650, Korea
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