Low Temperature Sintering of ZnO-Doped 0.01Pb(Mg1/2W1/2)O3–0.41Pb(Ni1/3Nb2/3)O3–0.35PbTiO3–0.23PbZrO3 Ceramics
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概要
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ZnO was added to 0.01Pb(Mg1/2W1/2)O3–0.41Pb(Ni1/3Nb2/3)O3–0.35PbTiO3–0.23PbZrO3 (0.01PMW–0.41PNN–0.35PT–0.23PZ) ceramics to reduce their sintering temperatures to below 900 °C. The effects of the ZnO additive on the densification and piezoelectric properties of the PMW–PNN–PT–PZ + 0.1 wt % Y2O3 + $x$ wt % ZnO ($0\leq x\leq 2.5$) ceramics were investigated. The structure of the PMW–PNN–PT–PZ ceramics was found to change from pseudocubic to tetragonal as their ZnO content was increased. The piezoelectric constant, the mechanical quality factor, and the electromechanical factor of the ceramics increased as their ZnO content increased. The optimum piezoelectric properties were found to be $d_{33}=594$ pC/N, $k_{\text{p}}=57$%, and $Q_{\text{m}}=64$, for PMW–PNN–PT–PZ + 0.1 wt % Y2O3 + 1.5 wt % ZnO sintered at 900 °C for 2 h.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-01-15
著者
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Sung Man-young
Department Electrical Engineering Korea University
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KIM Hyun-Jai
Thin Film Material Research Center, Korea Institute of Science and Technology
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Yoon Seok-jin
Thin Film Material Research Center Korea Institute Of Science And Technology
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Choi Ji-won
Thin Film Material Research Center Korea Institute Of Science And Technology
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Kim Sang-jong
Thin Film Material Research Center Korea Institute Of Science And Technology
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Kang Chong-Yun
Thin Film Material Research Center, Korea Institute of Science and Technology, Seoul, Korea
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Kang Chong-Yun
Thin Film material Research Center, KIST, P.O. Box 131, Cheongryang, Seoul 130-650, Korea
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Kim Hyun-Jai
Thin Film Material Research Center, Korea Institute of Science and Technology, Seoul, Korea
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Choi Ji-Won
Thin Film Material Research Center, Korea Institute of Science and Technology, Seoul, Korea
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