Crystallization and Improvement of Electrical Properties of Bi5Nb3O15 Thin Films Grown at Low Temperature

概要

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Amorphous Bi5Nb3O15 (B5N3) phase was formed for the films grown at 350 °C under low oxygen pressures (OPs) ($\leq 200$ mTorr). However, when OP exceeded 400 mTorr, crystalline Bi3NbO7 (B3N) phase, which is a low temperature transient phase of the crystalline B5N3 phase, was formed even at 350 °C. The dielectric constant ($k$) increased with increasing OP due to the formation of the crystalline B3N phase. The leakage current density increased with increasing OP, due to the increased surface roughness of the film. Presence of the intrinsic oxygen vacancies was also responsible for the increased leakage current density. Mn-doping improved the electrical properties of the films by producing the doubly ionized, extrinsic oxygen vacancies which reduced the number of the intrinsic oxygen vacancies. Mn-doping also considerably increased the $k$ value of the film to a maximum of 108 for the 5.0 mol % Mn-doped film grown at 350 °C.
2009-11-25