Structural and Dielectric Properties of the BaTi5O11 Thin Film Grown on the Poly-Si Substrate using RF Magnetron Sputtering

概要

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The BaTi5O11 thin films were grown on the poly-Si/SiO2/Si substrate using rf magnetron sputtering and their structural and dielectric properties were investigated. The BaO–TiO2 thin film deposited on the poly-Si substrate had an amorphous phase even though the growth temperature was high at 550°C. The crystalline BaTi5O11 thin films were formed when the amorphous film was annealed above 800°C. The BaTi5O11 phase was decomposed into Ba4Ti13O30, Ba2Ti9O20 and TiO2 phases as the films were annealed above 1100°C. The homogeneous BaTi5O11 thin film was formed when the film was grown at 550°C and rapid thermal annealed at 900°C for 3 min. The interface between the BaTi5O11 film and poly-Si substrate was sharp, and the inter-diffusions of the Si, Ba and Ti ions between the layers were negligible. The dielectric constant of the BaTi5O11 film was about 35, which is close to that of the bulk BaTi5O11 ceramics. The dissipation factor of all the films was smaller than 4.0%.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2004-08-15