Bipolar Resistive Switching Behavior of a Pt/NiO/TiN Device for Nonvolatile Memory Applications
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概要
- 論文の詳細を見る
Bipolar resistive switching behavior was observed in a Pt/NiO/TiN device. The device exhibited switching behavior that was stable over 100 cycles and did not degrade after 10^{4} s. An electroforming process was required to obtain these bipolar resistive switching properties, and the conduction behavior of the low resistance state followed Ohm's law, indicating that conductive filaments formed during the electroforming process. The conductive filaments consisted of oxygen vacancies and the Pt electrode behaved as an oxygen reservoir. The bipolar resistive switching of the Pt/NiO/TiN device was explained by the generation and annihilation of oxygen vacancies in the filaments.
- 2012-04-25
著者
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Nahm Sahn
Department Of Materials Science And Engineering Korea University
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Seong Tae-Geun
Department of Nano Semiconductor Engineering, Korea University, 1-5 Ka, Anam-dong, Sungbuk-ku, Seoul 136-701, Korea
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Sun Jong-Woo
Department of Materials Science and Engineering, Korea University, 1-5 Ka, Anam-dong, Sungbuk-ku, Seoul 136-701, Korea
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Joung Mi-Ri
Department of Materials Science and Engineering, Korea University, Seoul 136-701, Korea
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Seong Tae-Geun
Department of Nano-Semiconductor Engineering, Korea University, Seoul 136-701, Korea
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Yang Min
Optoelectronic Materials Center, Korea Institute of Science and Technology, 39-1 Hawolgok-dong, Sungbuk-ku, Seoul 136-791, Korea
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Roh Jaesung
Research and Development Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eup, Icheon, Kyunggi-do 467-701, Korea
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Moon Ji
Research and Development Division, Hynix Semiconductor Inc., Icheon, Gyunggi 467-701, Korea
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Lee Jeon-Kook
Optoelectronic Materials Center, KIST, Seoul 136-791, Republic of Korea
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Sun Jong-Woo
Department of Materials Science and Engineering, Korea University, Seoul 136-701, Korea
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Roh Jaesung
Research and Development Division, Hynix Semiconductor Inc., Icheon, Gyunggi 467-701, Korea
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Yang Min
Optoelectronic Materials Center, KIST, Seoul 136-791, Republic of Korea
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Nahm Sahn
Department of Nano-Semiconductor Engineering, Korea University, Seoul 136-701, Korea
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