Voltage-Pulse Induced Resistance Switching Characteristics in a Cr-Doped SrZrO3
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概要
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The time resolved bipolar resistance switching in a Pt/Cr-doped SrZrO3/SrRuO3 device has been investigated using pulse voltage. The required switching time between the high and low resistance states (HRS and LRS) is studied as a function of the pulse height and width. The resistance switching is found to be less dependent on the pulse height in the short pulse region. For $\mathrm{LRS}\rightarrow\mathrm{HRS}$ and $\mathrm{HRS}\rightarrow\mathrm{LRS}$ switching minimum switching times of ${\sim}500$ and ${\sim}100$ ns are required respectively, at a pulse height above the dc switching voltage. The authors attribute the distinction in the switching time to different switching mechanisms.
- 2010-11-25
著者
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Im Hyunsik
Department Of Semiconductor Science Dongguk University
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Kim Yongmin
Department Of Physics Chungnam National University
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Ko Tae
Department Of Electrical And Electronic Engineering Yonsei University
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Jung Kyooho
Department Of Semiconductor Science Dongguk University
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Yang Min
Optoelectronic Materials Center, Korea Institute of Science and Technology, 39-1 Hawolgok-dong, Sungbuk-ku, Seoul 136-791, Korea
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Lee Jeon-Kook
Optoelectronic Materials Center, KIST, Seoul 136-791, Republic of Korea
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Park Jae-Wan
Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53705, U.S.A.
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Kim Yongmin
Department of Semiconductor Science, Dongguk University, Seoul 100-715, Republic of Korea
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Yang Min
Optoelectronic Materials Center, KIST, Seoul 136-791, Republic of Korea
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