Memory Conductance Switching in a Ni--Ti--O Compound Thin Film
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概要
- 論文の詳細を見る
Nonvolatile conductance switching phenomena in a nickel-titanium oxide compound thin film were investigated for memory device applications. On/off switching ratios as high as {\sim}10^{4} were observed. Whereas the low-resistance state (LRS) showed good retention and endurance properties, the high resistance state (HRS) showed unstable switching properties. The temperature dependence of the LRS and HRS revealed that the switching mechanism is fundamentally based on the repeated process of the electroforming and the rupture of conducting filaments. The authors suggest that relatively weaker chemical binding between the Ti and O causes the unstable electrical conduction in the HRS.
- 2012-10-25
著者
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Im Hyunsik
Department Of Semiconductor Science Dongguk University
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Jung Woong
Department Of Electrical Engineering Korea Advanced Institute Of Science And Technology
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Jang Byeonguk
Department Of Semiconductor Science Dongguk University
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Kim Hyungsang
Department Of Physics Dongguk University
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Inamdar Akbar
Department Of Semiconductor Science Dongguk University
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Im Hyunsik
Department of Semiconductor Science, Dongguk University, Seoul 100-715, Republic of Korea
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Kim Jongmin
Department of Semiconductor Science, Dongguk University, Seoul 100-715, Republic of Korea
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Kim Duhwan
Department of Semiconductor Science, Dongguk University, Seoul 100-715, Republic of Korea
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Jung Woong
Department of Semiconductor Science, Dongguk University, Seoul 100-715, Republic of Korea
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