Effects of Ultrathin Al Layer Insertion on Resistive Switching Performance in an Amorphous Aluminum Oxide Resistive Memory
スポンサーリンク
概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2010-09-25
著者
-
KIM Yongmin
Department of Semiconductor Science, Dongguk University
-
IM Hyunsik
Department of Semiconductor Science, Dongguk University
-
Im Hyunsik
Department Of Semiconductor Science Dongguk University
-
HONG J.
Department of Orthopaedic Surgery, Medical College of Wisconsin
-
Kim Yongmin
Department Of Semiconductor Science Dongguk University
-
Kim Yongmin
Department Of Physics Chungnam National University
-
JUNG Woong
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology
-
SONG Jaehoon
Department of Semiconductor Science, Dongguk University
-
INAMDAR Akbar
Department of Semiconductor Science, Dongguk University
-
JANG ByeongUk
Department of Semiconductor Science, Dongguk University
-
JEON Kiyoung
Department of Semiconductor Science, Dongguk University
-
KIM YoungSam
Department of Semiconductor Science, Dongguk University
-
JUNG Kyooho
Department of Semiconductor Science, Dongguk University
-
KIM Hyungsang
Department of Physics, Dongguk University
-
Jung Woong
Department Of Semiconductor Science Dongguk University
-
Jung Woong
Department Of Electrical Engineering Korea Advanced Institute Of Science And Technology
-
Jung Kyooho
Department Of Semiconductor Science Dongguk University
-
Song Jaehoon
Department Of Semiconductor Science Dongguk University
-
Jeon Kiyoung
Department Of Semiconductor Science Dongguk University
-
Kim Youngsam
Department Of Semiconductor Science Dongguk University
-
Jang Byeonguk
Department Of Semiconductor Science Dongguk University
-
Kim Hyungsang
Department Of Physics Dongguk University
-
Inamdar Akbar
Department Of Semiconductor Science Dongguk University
関連論文
- Specific Heat Study of GaMnAs
- Biomechanical Evaluation of Anterior Thoracolumbar Spinal Instrumentation
- Nonlinear Quenching in a Monolithically Integrated Semiconductor Laser Logic Device
- Effects of Ultrathin Al Layer Insertion on Resistive Switching Performance in an Amorphous Aluminum Oxide Resistive Memory
- DEGRADATION MECHANISM OF ELECTRON EMISSION CHARACTERISTICS IN SILICON FIELD EMITTERS
- An Upper Bound for the Diffraction-Peak Width
- Odontoblast TRP Channels and Thermo/Mechanical Transmission
- Voltage-Pulse Induced Resistance Switching Characteristics in a Cr-Doped SrZrO3
- Exact Time Evolution of a Quantum Harmonic-Oscillator Chain : General Matter and Statistical Physics
- Memory Conductance Switching in a Ni--Ti--O Compound Thin Film
- Formation of Germanium-Rich Nanodots by Selective Oxidation of An As-Deposited Thin Hydrogenated Amorphous Silicon-Germanium Layer
- Impact of Drain Induced Barrier Lowering on Read Scheme in Silicon Nanocrystal Memory with Two-Bit-per-Cell Operation
- Proteases of an Early Colonizer Can Hinder Streptococcus mutans Colonization in vitro