Nonlinear Quenching in a Monolithically Integrated Semiconductor Laser Logic Device
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1989-07-20
著者
-
Kwon Young-Se
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology
-
Kwon Young-se
Department Of E.e. Kaist
-
JUNG Woong
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology
-
Jung Woong
Department Of Electrical Engineering Korea Advanced Institute Of Science And Technology
関連論文
- GaAs/AlGaAs Lensed Light Emitting Diode by the Meltback and Regrowth in Liquid Phase Epitaxy
- Monolithic Integration of InP-Based HEMT and MSM Photodiode Using InGaAsP (λ = 1.3μm) Buffer
- Surface-Emitting AlGaAs/GaAs DH LED with Buried-Window Cylindrical Lens : Waves, Optics and Quantum Electronics
- Open-Circuit Voltage Improvement in InGaAs/InP Heterojunction Solar Cells
- InP/InGaAs/InP Double Hetero-junction Solar Cells with Increased Open-Circuit Voltage
- An InGaAsP/InP Twin-Guide Laser Diode with Rectangular Ring Cavity
- Novel High-Radiance Surface-Emitting Light Emitting Diode Structure with Circular 45°Corner Reflector and Microlens
- A New High Radiance LED Structure with Circular 45° Corner Reflector
- Fabrication of Vertical-Cavity Front-Surface-Emitting Laser Diode (FSELD) Using a Heterojunction Bipolar Transistor Process
- Low-Loss and High-Frequency Interconnection Technology on Membrane Supported by Porous Silicon Post
- Phase-Locked Two-Dimensional Arrays of Vertical Cavity Surface Emitting Lasers
- Grating Metal Structure with Low-K BCB and Electroplated Copper for High-Q Spiral Inductors
- New Fabrication Technology for Integrating Field Effect Transistors and Diodes
- New Fabrication Technology Integrating FETs and Diodes
- Nonlinear Quenching in a Monolithically Integrated Semiconductor Laser Logic Device
- Tapered Sidewall Schottky Diodes with Very Low Taper Angles : A-4: LSI-3 AND JUNCTION DEVICES
- Performance of New Self-Aligned InP/InGaAs Heterojunction Bipolar Transistors Using Crystallographically Defined Emitter Contact Technology
- Numerical Simulation on the Device Structure of GaAs Floated Electron Channel Field-Effect Transistor
- A GaAs Junction-Gate FECFET(J-FECFET) for the Digital Integrated Circuits
- A GaAs Floated Electron Channel Field Effect Transistor (FECFET) Fabricated by Selective Metal Organic Chemical Vapor Deposition
- A Vertical Integration of GaAs/GaAlAs LED and Vertical FET with Embedded Schottky Electrodes
- Effects of Ultrathin Al Layer Insertion on Resistive Switching Performance in an Amorphous Aluminum Oxide Resistive Memory
- Integration of PIN and Vertical Junction Field Effect Transistor for Photodetector Optoelectronic Integrated Circuit
- Fabrication Method of Microlens Array Using Oxidized Porous Silicon Bulk Micromachining and PDMS Replication Molding
- Integrated Twin-Guide Corner Reflector Lasers with Surface-Grating-Etching for Simple Mode Selectivity
- Grating Metal Structure with Low-$K$ Benzocyclobutene and Electroplated Copper for High-$Q$ Spiral Inductors
- Heterojunction Bipolar Phototransistor with Monolithic Integrated Microlens
- Memory Conductance Switching in a Ni--Ti--O Compound Thin Film
- Novel High-Radiance Surface-Emitting Light Emitting Diode Structure with Circular 45° Corner Reflector and Microlens
- Monolithic Integration of InP-Based HEMT and MSM Photodiode Using InGaAsP ($\lambda=1.3$ μm) Buffer
- Open-Circuit Voltage Improvement in InGaAs/InP Heterojunction Solar Cells
- New Through-Wafer Via Interconnections with Thick Oxidized Porous Silicon Sidewall Via
- New Fabrication Technology for Integrating Field Effect Transistors and Diodes
- Silicon Nitride Two-Level-Temperature Passivation on InP/InGaAsP Light-Emitting Diodes
- Low-Loss and High-Frequency Interconnection Technology on Membrane Supported by Porous Silicon Post