New Fabrication Technology for Integrating Field Effect Transistors and Diodes
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概要
- 論文の詳細を見る
We demonstrated a new integration technology for field effect transistors (FETs) and diodes. This technology uses selective-area metalorganic chemical vapor deposition (MOCVD) for FET and diode layers. FETs (called FECFET) fabricated by this technology have very short distances between the drain and source, so that the characteristics such as knee voltage and transconductance are superior to those of conventional FETs with the same gate length. Because this structure has an n+-doped contact layer under an n-doped active layer, it is easy to integrate with a high-quality diode having low series resistance. By this approach, diodes with low series resistance and low junction capacitance have been fabricated. To demonstrate the integration of the diode and FECFET, a 36 GHz single balanced diode mixer and an intermediate frequency (IF) amplifier have been fabricated on a GaAs wafer.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-28
著者
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Kwon Young-se
Department Of E.e. Kaist
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Hong Song-cheol
Department Of Electrical Engineering Korea Advanced Institute Of Science And Technology
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Jung Jong-wan
Department Of Electrical Engineering Korea Advanced Institute Of Science And Technology
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Hong Song-Cheol
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology,
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Kwon Young-Se
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology,
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