Silicon Nitride Two-Level-Temperature Passivation on InP/InGaAsP Light-Emitting Diodes
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概要
- 論文の詳細を見る
The use of silicon nitride with a two-level temperature technique is proposed for the passivation of InP-based devices. InGaAsP/InP light-emitting diodes (LEDs) were fabricated by this passivation technique. The reverse current was decreased by about two orders of magnitude, and light–current linearity at a low current was improved.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2006-11-15
著者
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Kwon Young-se
Department Of E.e. Kaist
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Cha Jung-ho
Department Of Anatomy
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Kim Jaeho
Department Of Advanced Energy Graduate School Of Frontier Sciences The University Of Tokyo
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Kim Jaeho
Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Republic of Korea
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Cha Jung-Ho
Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Republic of Korea
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