Performance of New Self-Aligned InP/InGaAs Heterojunction Bipolar Transistors Using Crystallographically Defined Emitter Contact Technology
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-02-28
著者
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金 泰鎬
東京都立大学大学院
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Kwon Young-Se
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology
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Kwon Young-se
Department Of Electrical Engineering And Computer Science Korea Advanced Institute Of Science And Te
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Kwon Young-se
Department Of E.e. Kaist
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Kim Taeil
Samsung Advanced Institute Of Technology Materials And Devices Research Center
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KIM Moonjung
Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and T
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KIM Taeho
Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and T
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JEON Sookun
Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and T
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YOON Myounghoon
Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and T
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YANG Kyounghoon
Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and T
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Kim Taeho
Division Of Electrical Engineering Department Of Electrical Engineering And Computer Science Korea A
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Jeon Sookun
Department Of Electrical Engineering And Computer Science Korea Advanced Institute Of Science And Te
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Kim Moonjung
Department Of Electrical Engineering And Computer Science Korea Advanced Institute Of Science And Te
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金 泰鎬
Department Of Electrical Engineering And Computer Science Korea Advanced Institute Of Science And Te
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Yoon Myounghoon
Department Of Electrical Engineering And Computer Science Korea Advanced Institute Of Science And Te
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Yang Kyounghoon
Department Of Electrical Engineering And Computer Science Korea Advanced Institute Of Science And Te
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