Effects of Thermal Stress on the Performance of Benzocyclobutene-Passivated In_<0.52>Al_<0.48>As/In_<0.53>Ga_<0.47>As High Electron Mobility Transistors
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-30
著者
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Kim Taeil
Samsung Advanced Institute Of Technology Materials And Devices Research Center
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Kim Taeho
Division Of Electrical Engineering Department Of Electrical Engineering And Computer Science Korea A
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YANG Kyounghoon
Division of Electrical Engineering, Dept. of Electrical Engineering and Computer Science (EECS), Kor
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YOON Myounghoon
Division of Electrical Engineering, Department of Electrical Engineering and Computer Science, Korea
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KIM Daehee
Division of Electrical Engineering, Department of Electrical Engineering and Computer Science, Korea
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