Temperature Dependence of Threshold Current of Transverse Single-Mode InGaAsP/InGaP Buried-Heterostructure Laser

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概要

• 論文の詳細を見る

• Separate-confinement-heterostructure single-quantum-well (SCH-S QW) InGaAsP/InGaP structures were grown on a (100) GaAs substrate by liquid-phase epitaxy (LPE) and then buried-heterostructure (BH) lasers were fabricated after mesa etching. The output power of laser diodes could be cw-operated near 50 mW without any kink in the transverse single mode. The measured values of a charateristic temperature T_0 for BH InGaAsP/InGaP lasers were around 100 K for 〜500 μm cavity length. This relatively low value compared to the AlGaAs/GaAs quantum-well lasers could be better explained in terms of carrier leakage over the heterojunction barrier rather than Auger recombination which is intrinsic to quaternary semiconductor materials.

• 社団法人応用物理学会の論文
• 1994-05-15

著者

• Kim T

  Seoul National Univ. Seoul Kor

• Kim Taeil

  Samsung Advanced Institute Of Technology Materials And Devices Research Center

• Yoo Jae

  Samsung Advanced Institute Of Technology Materials And Devices Research Center:(present Address)chun

• Yoo Jae

  Samsung Advanced Institute Of Technology Materials And Devices Research Center

• KO Yongtae

  Samsung Advanced Institute of Technology, Materials and Devices Research Center

• KIM Hansaeng

  Samsung Advanced Institute of Technology, Materials and Devices Research Center

• PAK Georgui

  Samsung Advanced Institute of Technology, Materials and Devices Research Center

• LIM Gabgyu

  Samsung Advanced Institute of Technology, Materials and Devices Research Center

• Ko Yongtae

  Samsung Advanced Institute Of Technology Materials And Devices Research Center

• Lim Gabgyu

  Samsung Advanced Institute Of Technology Materials And Devices Research Center

• Pak Georgui

  Samsung Advanced Institute Of Technology Materials And Devices Research Center

• Kim Hansaeng

  Samsung Advanced Institute Of Technology Materials And Devices Research Center

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