Studies on the Low Local Temperature Rise in the Mirror Facet of a High-Power InGaAsP/GaAs Laser
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-12-01
著者
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PARK Kyung
Samsung Advanced Institute of Technology
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Yoo Jae
Samsung Advanced Institute Of Technology Materials And Devices Research Center:(present Address)chun
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Yoo Jae
Samsung Advanced Institute Of Technology Materials And Devices Research Center
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OH Myeong
Samsung Advanced Institute of Technology, Materials and Devices Research Center
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PARK Hea
Samsung Advanced Institute of Technology, Materials and Devices Research Center
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JUNG Seung
Samsung Advanced Institute of Technology, Materials and Devices Research Center
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PARK Gueorgui
Samsung Advanced Institute of Technology, Materials and Devices Research Center
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Park Hea
Samsung Advanced Institute Of Technology Materials And Devices Research Center
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Oh Myeong
Samsung Advanced Institute Of Technology Materials And Devices Research Center
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Park Gueorgui
Samsung Advanced Institute Of Technology Materials And Devices Research Center
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Jung Seung
Samsung Advanced Institute Of Technology Materials And Devices Research Center
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Park Kyung
Samsung Advanced Institute Of Technology Materials And Devices Research Center
関連論文
- Low Temperature Poly-Si Thin Film Transistor on Plastic Substrates(Thin Film Transistors, Fundamental and Application of Advanced Semiconductor Devices)
- Low temperature poly-Si thin film transistor on plastic substrates(Session A4 Thin Film Transistor)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Low temperature poly-Si thin film transistor on plastic substrates(Session A4 Thin Film Transistor)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Low temperature poly-Si thin film transistor on plastic substrates
- Oxygen Effect on Laser Crystallization of Sputtered a-Si Film on Plastic Substrate
- Studies on the Low Local Temperature Rise in the Mirror Facet of a High-Power InGaAsP/GaAs Laser
- 3電極AC-PDPにおける放電のANDロジックを用いた駆動回路数の削減
- Temperature Dependence of Threshold Current of Transverse Single-Mode InGaAsP/InGaP Buried-Heterostructure Laser
- A New Approach of Polycrystalline Silicon Film on Plastic Substrate Prepared by Ion Beam Deposition Followed by Excimer Laser Crystallization at Room Temperature
- Low-Temperature Process for Advanced Si Thin Film Transistor Technology
- Oxygen Effect on Laser Crystallization of Sputtered a-Si Film on Plastic Substrate