Low-Temperature Process for Advanced Si Thin Film Transistor Technology
スポンサーリンク
概要
- 論文の詳細を見る
Low-temperature Si thin film transistor (TFT) and its possibility as a new device process are described. Currently, an extensive study is performed in order to realize an advanced system on glass (SoG) by incorporating additional functional devices or circuits. By reducing further the process temperature down to 200 °C or below and by improving the fabrication process as an ultra-low temperature polycrystalline Si (U-LTPS), not only liquid crystal display (LCD) but also organic light emitting diode (O-LED) flat panel display (FPD) driven by using polycrystalline Si (poly-Si) TFTs is expected to be mounted on a flexible plastic substrate. Although technical issues to be solved remain for the fabrication of channels, gate insulator etc., it is possible for the Si TFT to be developed into a smart system on plastic for unique applications as well as a functional Si system-on-insulator in a ubiquitous information technology (IT) era.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-05-30
著者
-
KWON Jang
Samsung Advanced Institute of Technology
-
PARK Kyung
Samsung Advanced Institute of Technology
-
JUNG Ji
Samsung Advanced Institute of Technology
-
KIM Jong
Samsung Advanced Institute of Technology
-
Kim Do
Samsung Advanced Institute Of Technology (sait)
-
Cho Hans
Samsung Advanced Institute Of Technology
-
Noguchi Takashi
Samsung Advanced Institute Of Technology (sait)
-
Park Kyung
Samsung Advanced Institute of Technology (SAIT), Mt. 14-1, Nongseo-Ri, Giheung-Eup, Yongin-Si, Gyeonggi-Do 449-712, Korea
-
Kim Jong
Samsung Advanced Institute of Technology (SAIT), Mt. 14-1, Nongseo-Ri, Giheung-Eup, Yongin-Si, Gyeonggi-Do 449-712, Korea
-
Jung Ji
Samsung Advanced Institute of Technology (SAIT), Mt. 14-1, Nongseo-Ri, Giheung-Eup, Yongin-Si, Gyeonggi-Do 449-712, Korea
-
Lim Hyuck
Samsung Advanced Institute of Technology
-
Cho Hans
Samsung Advanced Institute of Technology (SAIT), Mt. 14-1, Nongseo-Ri, Giheung-Eup, Yongin-Si, Gyeonggi-Do 449-712, Korea
-
Yin Hua
Samsung Advanced Institute of Technology (SAIT), Mt. 14-1, Nongseo-Ri, Giheung-Eup, Yongin-Si, Gyeonggi-Do 449-712, Korea
-
Xianyu Wenxyu
Samsung Advanced Institute of Technology (SAIT), Mt. 14-1, Nongseo-Ri, Giheung-Eup, Yongin-Si, Gyeonggi-Do 449-712, Korea
-
Kim Do
Samsung Advanced Institute of Technology (SAIT), Mt. 14-1, Nongseo-Ri, Giheung-Eup, Yongin-Si, Gyeonggi-Do 449-712, Korea
-
Lim Hyuck
Samsung Advanced Institute of Technology (SAIT), Mt. 14-1, Nongseo-Ri, Giheung-Eup, Yongin-Si, Gyeonggi-Do 449-712, Korea
-
Noguchi Takashi
Samsung Advanced Institute of Technology
関連論文
- Advanced Poly-Si TFT with Fin-Like Channels (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Advanced Poly-Si TFT with Fin-Like Channels (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Regulation of Adiponectin Receptor 2 Expression via PPAR-α in NIT-1 Cells
- Low Temperature Poly-Si Thin Film Transistor on Plastic Substrates(Thin Film Transistors, Fundamental and Application of Advanced Semiconductor Devices)
- Low temperature poly-Si thin film transistor on plastic substrates(Session A4 Thin Film Transistor)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Low temperature poly-Si thin film transistor on plastic substrates(Session A4 Thin Film Transistor)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Low temperature poly-Si thin film transistor on plastic substrates
- A 385-500GHz Low Noise Superconductor-Insulator-Superconductor Mixer for ALMA Band 8( Superconducting High-frequency Devices)
- The First Radioastronomical Observation with Photonic Local Oscillator
- Real-Time Growth Control of Ge-Sb-Te Multilayer Film as Optical Recording Media by In Situ Ellipsometry
- Oxygen Effect on Laser Crystallization of Sputtered a-Si Film on Plastic Substrate
- Studies on the Low Local Temperature Rise in the Mirror Facet of a High-Power InGaAsP/GaAs Laser
- Experimental Results of SIS Mixers with Distributed Junction Arrays
- Analysis of The Bandwidth Performance of SIS Mixers with Distributed Junction Arrays
- Parallel Connected Twin SIS Junctions for Millimeter and Submillimeter Wave Mixers
- Development of a 500-GHz Band SIS Mixer
- Parallel Connected Twin SIS Junctions for Millimeter and Submillimeter Wave Mixers : Analysis and Experimental Verification
- 3電極AC-PDPにおける放電のANDロジックを用いた駆動回路数の削減
- Amorphous Silicon Film Deposition by Low Temperature Catalytic Chemical Vapor Deposition (
- Excimer Laser Annealing of PbZr_Ti_O_3 Thin Film at Low Temperature(Electronic Materials)
- Optimization of Postannealing Process for Low Temperature MOCVD (Ba, Sr)TiO_3 Thin Films
- Experimental and Theoretical Analysis of Degradation in Ga2O3–In2O3–ZnO Thin-Film Transistors
- Thermal Analysis of Degradation in Ga2O3–In2O3–ZnO Thin-Film Transistors
- A New Approach of Polycrystalline Silicon Film on Plastic Substrate Prepared by Ion Beam Deposition Followed by Excimer Laser Crystallization at Room Temperature
- Tensile-Strained Single-Crystal Si Film on Insulator by Epitaxially Seeded and Laser-Induced Lateral Crystallization
- Low-Temperature Process for Advanced Si Thin Film Transistor Technology
- Erratum: "Amorphous Silicon Film Deposition by Low Temperature Catalytic Chemical Vapor Deposition ($
- Oxygen Effect on Laser Crystallization of Sputtered a-Si Film on Plastic Substrate