Advanced Poly-Si TFT with Fin-Like Channels (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))

概要

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The advanced LTPS TFT with 3-Dimensional channels of Fin-Like profile has been demonstrated via the simple Excimer Laser Annealing method and special wide undercut structure without any additional patterning process cost. This approach provides a much narrow Fin-Like channels in devices with high ratio of film thickness to the width and also a high quality poly-silicon film in channels such as smooth surface, tight grain arrangement and medium grain size etc. Due to the stronger electrical stress on the channel by the multi-gate effect and the better film in channel, the new device fabricated on the quartz substrate with Fin-Like channel structure show good characteristics of the highest mobility up to 395cm^2/V・sec, the sub-threshold voltage slope below 400mV/dec and the On-Off current ratio higher than 10^6.
社団法人電子情報通信学会の論文
2005-06-23