Excimer Laser Annealing of PbZr_<0.4>Ti_<0.6>O_3 Thin Film at Low Temperature(Electronic Materials)

概要

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PbZr_<0.4>Ti_<0.6>O_3 (PZT) thin films with high crystallinity and high remanant polarization (P_r) have been fabricated by sol-gel deposition with pulsed excimer (XeCl) laser annealing at low process temperatures. The amorphous PZT films were prepared on Pt/Ti/SiO_2/Si substrates by a sol-gel method. The deposited amorphous PZT films were annealed at 550℃ for 10min. to initiate the nucleation of the PZT perovskite phase, and then annealed with an UV pulsed excimer laser (308nm) heating at 400℃. X-ray diffraction (XRD) patterns show that 150-230mJ/cm^2 range multi-shot excimer laser irradiation drastically improved the crystallinity of the PZT perovskite phase. Field emission SEM (FE SEM) image show that the PZT thin film has uniform-sized crystal grains. The ferroelectric properties were found to depend on the laser energy density and shot number.
社団法人電子情報通信学会の論文
2006-10-01