Oxygen Effect on Laser Crystallization of Sputtered a-Si Film on Plastic Substrate
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概要
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We studied a-Si film deposited by rf sputtering as a precursor material for laser crystallization. The oxygen contents from 4.63 to 16.62 at. % was found in the fairly optimized a-Si films deposited by Xe sputtering. The oxygen gas incorporation increased the surface roughness and exacerbated the Si film agglomeration phenomenon during laser crystallization. The incorporated oxygen atoms in polycrystalline Si (poly-Si) film limit the grain growth of Si atoms below 50 nm.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2006-01-25
著者
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KWON Jang
Samsung Advanced Institute of Technology
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PARK Kyung
Samsung Advanced Institute of Technology
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JUNG Ji
Samsung Advanced Institute of Technology
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KIM Jong
Samsung Advanced Institute of Technology
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Kim Do
Samsung Advanced Institute Of Technology (sait)
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Cho Hans
Samsung Advanced Institute Of Technology
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Noguchi Takashi
Samsung Advanced Institute Of Technology (sait)
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Lim Hyuck
Samsung Advanced Institute of Technology (SAIT), Kyunggi-Do, Korea
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Lim Hyuck
Samsung Advanced Institute of Technology
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Jung Ji
Samsung Advanced Institute of Technology (SAIT), Kyunggi-Do, Korea
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Cho Hans
Samsung Advanced Institute of Technology (SAIT), Kyunggi-Do, Korea
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Noguchi Takashi
Samsung Advanced Institute of Technology
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