Parallel Connected Twin SIS Junctions for Millimeter and Submillimeter Wave Mixers : Analysis and Experimental Verification

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概要

• 論文の詳細を見る

• A Superconductor-Insulator-Superconductor (SIS) mixer using two junctions connected in parallel through a stripline inductance has been studied. The essential point of the two-junctions device is that the capacitance of the junctions was tuned out by the inductance to obtain a broadband operation without mechanical tuning elements. It has been shown by theoretical analysis that the performance of this type of device is excellent and nearly quantum-limited performance of the mixer can be obtained. It has been demonstrated that the double sideband (DSB) noise temperature of a receiver employing this type of device was less than 40K over the bandwidth of 90-120 GHz and that the lowest receiver noise temperature of 〜18K, which is only 3.2 times as large as the quantum limited photon noise was obtained around 118 GHz. Junctions used in the two-junctions device have significantly larger area, i.e. larger capacitance, and smaller normal resistance than conventional ones. In order to obtain a good impedance match between the source and the junctions, an impedance transformer made of a superconducting stripline was integrated with the junctions. This type of two-junctions device can easily be scaled to submillimeter frequency without using submicron-sized SIS junctions.

• 社団法人電子情報通信学会の論文
• 1995-05-25

著者

• Inatani J

  Nobeyama Radio Observatory

• NOGUCHI Takashi

  Nobeyama Radio Observatory, National Astronomical Observatory of Japan

• Shi S‐c

  Purple Mountain Observatory Jiangsu Chn

• Shi Sheng-cai

  Nobeyama Radio Observatory National Astronomical Observatory Of Japan

• INATANI Junji

  Nobeyama Radio Observatory

• Noguchi Takashi

  Advanced Technology Center National Astronomical Observatory Of Japan

• Noguchi T

  National Astronomical Observatory Of Japan

• Noguchi Takashi

  Samsung Advanced Institute Of Technology (sait)

• Noguchi Takashi

  Nobeyama Radio Observatory

関連論文

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• Advanced Poly-Si TFT with Fin-Like Channels (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
• A New 100-GHz Band Front-End System with a Waveguide-Type Dual-Polarization Sideband-Separating SIS Receiver for the NRO 45-m Radio Telescope
• Low Temperature Poly-Si Thin Film Transistor on Plastic Substrates(Thin Film Transistors, Fundamental and Application of Advanced Semiconductor Devices)
• Low temperature poly-Si thin film transistor on plastic substrates(Session A4 Thin Film Transistor)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
• Low temperature poly-Si thin film transistor on plastic substrates(Session A4 Thin Film Transistor)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
• Low temperature poly-Si thin film transistor on plastic substrates
• A 600-700 GHz Resonant Distributed Junction for a Fixed-Tuned Waveguide Receiver(Special Issue on Superconductive Electronics)
• A 385-500GHz Low Noise Superconductor-Insulator-Superconductor Mixer for ALMA Band 8( Superconducting High-frequency Devices)
• Cartridge-Type 800GHz Receiver for the Atacama Submillimeter Telescope Experiment (ASTE)
• The First Radioastronomical Observation with Photonic Local Oscillator
• Ultra-Low Noise Photonic Local Oscillator at 100 GHz
• Oxygen Effect on Laser Crystallization of Sputtered a-Si Film on Plastic Substrate
• Experimental Results of SIS Mixers with Distributed Junction Arrays
• Analysis of The Bandwidth Performance of SIS Mixers with Distributed Junction Arrays
• Parallel Connected Twin SIS Junctions for Millimeter and Submillimeter Wave Mixers
• Development of a 500-GHz Band SIS Mixer
• Parallel Connected Twin SIS Junctions for Millimeter and Submillimeter Wave Mixers : Analysis and Experimental Verification
• A New 60-cm Radio Survey Telescope with the Sideband-Separating SIS Receiver for the 200GHz Band
• Phase Locking of SWL Array Junctions in Submillimeter Mixing
• Amorphous Silicon Film Deposition by Low Temperature Catalytic Chemical Vapor Deposition (
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• Excimer Laser Annealing of PbZr_Ti_O_3 Thin Film at Low Temperature(Electronic Materials)
• Development of a Compact Dual-Frequency SIS Receiver
• Characteristics of Superconducting Nb Layer Fabricated Using High-Vacuum Electron Beam Evaporation
• Low-Noise Superconducting Receivers for Millimeter and Submillimeter Wavelengths(Special Issue on Superconductive Electron Devices and Their Applications)
• Optimization of Postannealing Process for Low Temperature MOCVD (Ba, Sr)TiO_3 Thin Films
• Predicted Performance of Superconductor-Insulator-Superconductor Mixers with Inhomogeneous Distributed Juction Arrays
• A New Approach of Polycrystalline Silicon Film on Plastic Substrate Prepared by Ion Beam Deposition Followed by Excimer Laser Crystallization at Room Temperature
• Tensile-Strained Single-Crystal Si Film on Insulator by Epitaxially Seeded and Laser-Induced Lateral Crystallization
• Low-Temperature Process for Advanced Si Thin Film Transistor Technology
• Erratum: "Amorphous Silicon Film Deposition by Low Temperature Catalytic Chemical Vapor Deposition ($
• Oxygen Effect on Laser Crystallization of Sputtered a-Si Film on Plastic Substrate

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