Parallel Connected Twin SIS Junctions for Millimeter and Submillimeter Wave Mixers

スポンサーリンク

概要

• 論文の詳細を見る

• We have successfully developed a process for the fabrication of high-quality Nb/AlOx/Nb tunnel junctions with small area and high current density. This process utilizes the anodization technique employing an SiO_2 mask to define small junctions. Using this process, we can fabricate junctions as small as 0.6μm^2 with extremely low subgap leakage current and very high critical current density. We have built a 100-GHz band SIS receiver using these junctions with a novel integrated tuning circuit. A receiver noise temperature of 〜20 K (DSB)was obtained with it at 110 GHz. This is only 4 times as large as the quantum limited photon noise of hω/k_B.

• 社団法人電子情報通信学会の論文
• 1996-04-26

著者

• Inatani J

  Nobeyama Radio Observatory

• NOGUCHI Takashi

  Nobeyama Radio Observatory, National Astronomical Observatory of Japan

• Shi S‐c

  Purple Mountain Observatory Jiangsu Chn

• Shi Sheng-cai

  Nobeyama Radio Observatory National Astronomical Observatory Of Japan

• INATANI Junji

  Nobeyama Radio Observatory

• Noguchi Takashi

  Advanced Technology Center National Astronomical Observatory Of Japan

• Noguchi T

  National Astronomical Observatory Of Japan

• Noguchi Takashi

  Samsung Advanced Institute Of Technology (sait)

• Noguchi Takashi

  Nobeyama Radio Observatory

関連論文

• A 350 GHz SIS Receiver on the Nobeyama 10m Submillimeter Telescope
• Advanced Poly-Si TFT with Fin-Like Channels (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
• Advanced Poly-Si TFT with Fin-Like Channels (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
• A New 100-GHz Band Front-End System with a Waveguide-Type Dual-Polarization Sideband-Separating SIS Receiver for the NRO 45-m Radio Telescope
• Low Temperature Poly-Si Thin Film Transistor on Plastic Substrates(Thin Film Transistors, Fundamental and Application of Advanced Semiconductor Devices)
• Low temperature poly-Si thin film transistor on plastic substrates(Session A4 Thin Film Transistor)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
• Low temperature poly-Si thin film transistor on plastic substrates(Session A4 Thin Film Transistor)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
• Low temperature poly-Si thin film transistor on plastic substrates
• A 600-700 GHz Resonant Distributed Junction for a Fixed-Tuned Waveguide Receiver(Special Issue on Superconductive Electronics)
• A 385-500GHz Low Noise Superconductor-Insulator-Superconductor Mixer for ALMA Band 8( Superconducting High-frequency Devices)
• Cartridge-Type 800GHz Receiver for the Atacama Submillimeter Telescope Experiment (ASTE)
• The First Radioastronomical Observation with Photonic Local Oscillator
• Ultra-Low Noise Photonic Local Oscillator at 100 GHz
• Oxygen Effect on Laser Crystallization of Sputtered a-Si Film on Plastic Substrate
• Experimental Results of SIS Mixers with Distributed Junction Arrays
• Analysis of The Bandwidth Performance of SIS Mixers with Distributed Junction Arrays
• Parallel Connected Twin SIS Junctions for Millimeter and Submillimeter Wave Mixers
• Development of a 500-GHz Band SIS Mixer
• Parallel Connected Twin SIS Junctions for Millimeter and Submillimeter Wave Mixers : Analysis and Experimental Verification
• A New 60-cm Radio Survey Telescope with the Sideband-Separating SIS Receiver for the 200GHz Band
• Phase Locking of SWL Array Junctions in Submillimeter Mixing
• Amorphous Silicon Film Deposition by Low Temperature Catalytic Chemical Vapor Deposition (
• Quasi-Optical SIS Mixers with Nb/AIO_x/Nb Tunnel Junctions in the 270-GHz Band (Special Issue on Toward Digital and Analog Applications of Superconductors)
• Excimer Laser Annealing of PbZr_Ti_O_3 Thin Film at Low Temperature(Electronic Materials)
• Development of a Compact Dual-Frequency SIS Receiver
• Characteristics of Superconducting Nb Layer Fabricated Using High-Vacuum Electron Beam Evaporation
• Low-Noise Superconducting Receivers for Millimeter and Submillimeter Wavelengths(Special Issue on Superconductive Electron Devices and Their Applications)
• Optimization of Postannealing Process for Low Temperature MOCVD (Ba, Sr)TiO_3 Thin Films
• Predicted Performance of Superconductor-Insulator-Superconductor Mixers with Inhomogeneous Distributed Juction Arrays
• A New Approach of Polycrystalline Silicon Film on Plastic Substrate Prepared by Ion Beam Deposition Followed by Excimer Laser Crystallization at Room Temperature
• Tensile-Strained Single-Crystal Si Film on Insulator by Epitaxially Seeded and Laser-Induced Lateral Crystallization
• Low-Temperature Process for Advanced Si Thin Film Transistor Technology
• Erratum: "Amorphous Silicon Film Deposition by Low Temperature Catalytic Chemical Vapor Deposition ($
• Oxygen Effect on Laser Crystallization of Sputtered a-Si Film on Plastic Substrate

もっと見る 閉じる

スポンサーリンク