Low Temperature Poly-Si Thin Film Transistor on Plastic Substrates(Thin Film Transistors, <Special Section>Fundamental and Application of Advanced Semiconductor Devices)
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概要
- 論文の詳細を見る
Poly-Si TFT (Thin Film transistor) fabricated below 170℃ using excimer laser crystallization of sputtered Si films was characterized. In particular, a gate insulator with a breakdown field exceeding 8 MV/cm was deposited by using ICP (Inductively Coupled Plasma) CVD (Chemical Vapor Deposition). A buffer layer possessing high thermal conductivity was inserted between the active channel and the plastic substrate, in order to protect the plastic substrate from the thermal energy of the laser and to increase adhesion of Si film on plastic. Using this method, we successfully fabricate TFT with a stable electron field-effect mobility value greater than 14.7 cm^2/Vsec.
- 社団法人電子情報通信学会の論文
- 2005-04-01
著者
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Jung Ji
Sumsung Advanced Institute Of Technology
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Cho Hans
Samsung Advanced Institute of Technology, Kihung-Eup Yongin-Si
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Noguchi Takashi
Samsung Advanced Institute of Technology, Kihung-Eup Yongin-Si
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Kim Jong
Sumsung Advanced Institute Of Technology
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Kim D
Samsung Advanced Institute Of Technology (sait)
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KIM DO
Samsung Biomedical Institute
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Park Y
Samsung Advanced Institute Of Technology (sait)
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KWON Jang
Samsung Advanced Institute of Technology
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PARK Kyung
Samsung Advanced Institute of Technology
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JUNG Ji
Samsung Advanced Institute of Technology
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KIM Jong
Samsung Advanced Institute of Technology
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PARK Young
Samsung Advanced Institute of Technology
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PARK Kyung
Sumsung Advanced Institute of Technology
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KWON Jang
Sumsung Advanced Institute of Technology
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NOGUCHI Takashi
University of the Ryukyus
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Kim Do
Samsung Advanced Institute Of Technology (sait)
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Cho Hans
Samsung Advanced Institute Of Technology (sait)
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Cho Hans
Samsung Advanced Institute Of Technology
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Park Kyung
Division Of Radioisotope Production And Application Hanaro Center Korea Atomic Energy Research Insti
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Noguchi T
National Astronomical Observatory Of Japan
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Noguchi Takashi
Samsung Advanced Institute Of Technology (sait)
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Noguchi Takashi
Samsung Advanced Institute of Technology
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