Reliability Analysis of Ultra Low-Temperature Polycrystalline Silicon Thin-Film Transistors
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概要
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We investigated the reliability of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) fabricated by an ultra low-temperature process below 200 °C. Their comparatively high reliability was confirmed. It was found by emission observation that hot carriers were hardly generated under the drain avalanche condition. The Joule heating effect was also hardly observed under DC stress at high drain and gate voltage stress. These results show that the hot carrier and Joule heating effects are not the predominant causes of the degradation of ultra low-temperature TFTs. The new degradation mode of the threshold voltage shift by a vertical electric field was found to be dominant in ultra low-temperature TFT.
- 2007-03-30
著者
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URAOKA Yukiharu
Nara Institute of Science and Technology
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Jung Ji
Sumsung Advanced Institute Of Technology
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Kim Jong
Sumsung Advanced Institute Of Technology
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UENO Hitoshi
Nara Institute of Science and Technology
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SUGAWARA Yuta
Nara Institute of Science and Technology
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YANO Hiroshi
Nara Institute of Science and Technology
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HATAYAMA Tomoaki
Nara Institute of Science and Technology
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PARK Kyung
Sumsung Advanced Institute of Technology
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KWON Jang
Sumsung Advanced Institute of Technology
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NOGUCHI Takashi
University of the Ryukyus
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Fuyuki Takashi
Nara Inst. Sci. And Technol. Nara Jpn
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Kwon Jang
Sumsung Advanced Institute of Technology, Kyunggi 440-600, Korea
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Park Kyung
Sumsung Advanced Institute of Technology, Kyunggi 440-600, Korea
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Yano Hiroshi
Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan
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Fuyuki Takashi
Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan
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Uraoka Yukiharu
Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan
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Kim Jong
Sumsung Advanced Institute of Technology, Kyunggi 440-600, Korea
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Hatayama Tomoaki
Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan
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Jung Ji
Sumsung Advanced Institute of Technology, Kyunggi 440-600, Korea
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Ueno Hitoshi
Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan
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