Sputter-Deposited Thin Gate SiO2 Films for High Quality Polycrystalline Silicon Thin Film Transistors
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概要
- 論文の詳細を見る
Polycrystalline silicon thin film transistors (poly-Si TFTs) with sputter-deposited thin gate SiO2 films down to 9.5 nm have been fabricated and characterized. High performance n- and p-channel poly-Si TFTs were obtained by using sputter-deposited gate SiO2 films. Electrical characteristics of on-current, threshold voltage and subthreshold slope were improved by thinning gate SiO2 film. It was also clarified that "punch-through" short-channel effect was effectively suppressed by thinning gate SiO2 films down to 9.5 nm. Moreover, high speed operation of complementary circuit consisted of n- and p-channel poly-Si TFTs was confirmed. In addition, sputter-deposited SiO2 films showed excellent insulating properties of high breakdown electric field and low leakage current.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-05-30
著者
-
URAOKA Yukiharu
Nara Institute of Science and Technology
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MIYASHITA Makoto
Nara Institute of Science and Technology
-
Fuyuki Takashi
Nara Inst. Sci. And Technol. Nara Jpn
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Uraoka Yukiharu
Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan
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Serikawa Tadashi
The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan
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